Infineon IPU Type N-Channel MOSFET, 14 A, 950 V, 3-Pin TO-251 IPU95R450P7AKMA1
- RS庫存編號:
- 258-3905
- 製造零件編號:
- IPU95R450P7AKMA1
- 製造商:
- Infineon
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可享批量折扣
小計（1 包，共 2 件）*
TWD169.00
(不含稅)
TWD177.44
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 1,466 件從 2026年5月18日 起發貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 2 - 8 | TWD84.50 | TWD169.00 |
| 10 - 18 | TWD80.00 | TWD160.00 |
| 20 - 28 | TWD76.00 | TWD152.00 |
| 30 - 38 | TWD71.00 | TWD142.00 |
| 40 + | TWD65.50 | TWD131.00 |
* 參考價格
- RS庫存編號:
- 258-3905
- 製造零件編號:
- IPU95R450P7AKMA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 14A | |
| Maximum Drain Source Voltage Vds | 950V | |
| Package Type | TO-251 | |
| Series | IPU | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 450mΩ | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 35nC | |
| Maximum Power Dissipation Pd | 104W | |
| Forward Voltage Vf | 0.9V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 14A | ||
Maximum Drain Source Voltage Vds 950V | ||
Package Type TO-251 | ||
Series IPU | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 450mΩ | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 35nC | ||
Maximum Power Dissipation Pd 104W | ||
Forward Voltage Vf 0.9V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon 950V CoolMOS P7 series delivers outstanding performance in terms of efficiency, thermal behaviour and ease-of-use. As the all other P7 family members, the 950V CoolMOS P7 series comes with an integrated Zener diode ESD protection. The integrated diode considerably improves ESD robustness, thus reducing ESD-related yield loss and reaching exceptional ease-of-use levels. CoolMOS P7 is developed with best-in-class VGS(th) of 3V and a narrow tolerance of only ± 0.5V, which makes it easy to drive and design-in.
Enabling higher power density designs, BOM savings, and lower assembly cost
Easy to drive and to design-in
Better production yield by reducing ESD related failures
Less production issues and reduced field returns
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