Infineon CoolMOS P7 Type N-Channel MOSFET & Diode, 4 A, 950 V Enhancement, 3-Pin TO-251

RS庫存編號:: 220-7451
製造零件編號:: IPU95R2K0P7AKMA1
製造商:: Infineon

Infineon CoolMOS P7 Type N-Channel MOSFET & Diode, 4 A, 950 V Enhancement, 3-Pin TO-251

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

小計（1 管，共 75 件）*

TWD2,047.50

(不含稅)

TWD2,149.50

訂單超過 $1,300.00 免費送貨

有庫存

加上 4,425 件從 2026年1月19日起發貨

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單位	每單位	每管*
75 - 75	TWD27.30	TWD2,047.50
150 - 225	TWD26.50	TWD1,987.50
300 +	TWD24.40	TWD1,830.00

* 參考價格

RS庫存編號:: 220-7451
製造零件編號:: IPU95R2K0P7AKMA1
製造商:: Infineon

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Infineon
	Channel Type	Type N
	Product Type	MOSFET & Diode
	Maximum Continuous Drain Current Id	4A
	Maximum Drain Source Voltage Vds	950V
	Series	CoolMOS P7
	Package Type	TO-251
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	2Ω
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	37W
	Maximum Gate Source Voltage Vgs	20 V
	Forward Voltage Vf	0.9V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	10nC
	Maximum Operating Temperature	150°C
	Height	6.22mm
	Width	2.41 mm
	Standards/Approvals	No
	Length	6.73mm
	Automotive Standard	No

	選取全部
	品牌 Infineon
	Channel Type Type N
	Product Type MOSFET & Diode
	Maximum Continuous Drain Current Id 4A
	Maximum Drain Source Voltage Vds 950V
	Series CoolMOS P7
	Package Type TO-251
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 2Ω
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 37W
	Maximum Gate Source Voltage Vgs 20 V
	Forward Voltage Vf 0.9V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 10nC
	Maximum Operating Temperature 150°C
	Height 6.22mm
	Width 2.41 mm
	Standards/Approvals No
	Length 6.73mm
	Automotive Standard No

Datasheet - IPU95R2K0P7AKMA1

The Infineon IPU95R2K0P7 designed to meet the growing consumer needs in the high voltage MOSFETs arena, the latest 950V Cool MOS P7 technology focuses on the low-power SMPS market. It offer 50V more blocking voltage than its predecessor 900V Cool MOS C3, the 950V Cool MOS P7 series delivers outstanding performance in terms of efficiency, thermal behaviour and ease-of-use. As the all other P7 family members, the 950V Cool MOS P7 series comes with an integrated Zener diode ESD protection. The integrated diode considerably improves ESD robustness, thus reducing ESD-related yield loss and reaching exceptional ease-of-use levels. Cool MOS P7 is developed with best-in-class VGS(the) of 3V and a narrow tolerance of only ± 0.5V, which makes it easy to drive and design-in.

Best-in-class FOM RDS(on) Eoss; reduced Qg, Ciss and Coss

Best-in-class DPAK RDS(on) of 450 mΩ

Best-in-class VGS(the) of 3V and smallest VGS(the) variation of ±0.5V

Integrated Zener diode ESD protection up to Class 2 (HBM)

Best-in-class quality and reliability

Infineon CoolMOS P7 Type N-Channel MOSFET & Diode, 4 A, 950 V Enhancement, 3-Pin TO-251

訂單超過 $1,300.00 免費送貨

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