Infineon CoolMOS P7 Type N-Channel MOSFET & Diode, 7 A, 800 V Enhancement, 3-Pin TO-251

RS庫存編號:: 220-7440
製造零件編號:: IPS80R750P7AKMA1
製造商:: Infineon

Infineon CoolMOS P7 Type N-Channel MOSFET & Diode, 7 A, 800 V Enhancement, 3-Pin TO-251

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

小計（1 管，共 75 件）*

TWD2,955.00

(不含稅)

TWD3,102.75

訂單超過 $1,300.00 免費送貨

暫時缺貨

從 2026年10月27日發貨

**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。

單位	每單位	每管*
75 - 75	TWD39.40	TWD2,955.00
150 - 225	TWD38.20	TWD2,865.00
300 +	TWD35.20	TWD2,640.00

* 參考價格

RS庫存編號:: 220-7440
製造零件編號:: IPS80R750P7AKMA1
製造商:: Infineon

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Infineon
	Channel Type	Type N
	Product Type	MOSFET & Diode
	Maximum Continuous Drain Current Id	7A
	Maximum Drain Source Voltage Vds	800V
	Package Type	TO-251
	Series	CoolMOS P7
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	750mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	0.9V
	Typical Gate Charge Qg @ Vgs	17nC
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	51W
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Height	6.22mm
	Length	6.7mm
	Width	2.35 mm
	Automotive Standard	No

	選取全部
	品牌 Infineon
	Channel Type Type N
	Product Type MOSFET & Diode
	Maximum Continuous Drain Current Id 7A
	Maximum Drain Source Voltage Vds 800V
	Package Type TO-251
	Series CoolMOS P7
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 750mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 0.9V
	Typical Gate Charge Qg @ Vgs 17nC
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 51W
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Height 6.22mm
	Length 6.7mm
	Width 2.35 mm
	Automotive Standard No

Datasheet - IPS80R750P7AKMA1

The Infineon 800V Cool MOS P7 super junction MOSFET series is a perfect fit for low power SMPS applications by fully addressing market needs in performance, ease-of-use and price/performance ratio. It mainly focuses on fly back applications including adapter and charger, LED driver, audio SMPS, AUX and industrial power. This new product family offers up to 0.6% efficiency gain and 2°C to 8°C lower MOSFET temperature compared to its predecessor as well as to competitor parts tested in typical fly back applications. It also enables higher power density designs through lower switching losses and better DPAK R DS(on) products. Overall, it helps customers save BOM cost and reduce assembly effort.

Best-in-class FOM R DS(on) * E oss; reduced Qg, C is and C oss

Best-in-class DPAK R DS(on) of 280mΩ

Best-in-class V (GS)the of 3V and smallest V (GS)the variation of ± 0.5V

Integrated Zener diode ESD protection up to Class 2 (HBM)

Best-in-class quality and reliability

Fully optimized portfolio

0.1% to 0.6% efficiency gain and 2°C to 8°C lower MOSFET temperature as compared to Cool MOS™ C3

Enabling higher power density designs, BOM savings and lower assembly cost

Easy to drive and to design-in

Better production yield by reducing ESD related failures

Less production issues and reduced field returns

Easy to select right parts for fine tuning of designs

Infineon CoolMOS P7 Type N-Channel MOSFET & Diode, 7 A, 800 V Enhancement, 3-Pin TO-251

訂單超過 $1,300.00 免費送貨

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