Infineon CoolMOS P7 Type N-Channel MOSFET & Diode, 9.4 A, 700 V Enhancement, 3-Pin TO-251 IPSA70R1K2P7SAKMA1
- RS庫存編號:
- 220-7443
- 製造零件編號:
- IPSA70R1K2P7SAKMA1
- 製造商:
- Infineon
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可享批量折扣
小計（1 包，共 25 件）*
TWD402.50
(不含稅)
TWD422.50
(含稅)
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單位 | 每單位 | 每包* |
|---|---|---|
| 25 - 100 | TWD16.10 | TWD402.50 |
| 125 + | TWD15.80 | TWD395.00 |
* 參考價格
- RS庫存編號:
- 220-7443
- 製造零件編號:
- IPSA70R1K2P7SAKMA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET & Diode | |
| Maximum Continuous Drain Current Id | 9.4A | |
| Maximum Drain Source Voltage Vds | 700V | |
| Package Type | TO-251 | |
| Series | CoolMOS P7 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.2Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.9V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Power Dissipation Pd | 25W | |
| Typical Gate Charge Qg @ Vgs | 4.8nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 6.1mm | |
| Length | 6.6mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET & Diode | ||
Maximum Continuous Drain Current Id 9.4A | ||
Maximum Drain Source Voltage Vds 700V | ||
Package Type TO-251 | ||
Series CoolMOS P7 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.2Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.9V | ||
Minimum Operating Temperature -40°C | ||
Maximum Power Dissipation Pd 25W | ||
Typical Gate Charge Qg @ Vgs 4.8nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 6.1mm | ||
Length 6.6mm | ||
Automotive Standard No | ||
The Infineon has developed he 700V Cool MOS P7 super junction MOSFET series to serve today’s and especially tomorrow’s trends in fly back topologies. It addresses the low power SMPS market, such as mobile phone chargers or notebook adapters by offering fundamental performance gains compared to super junction technologies used today. By combining customers’ feedback with over 20 years of super junction MOSFET experience, 700V Cool MOS P7 enables best fit for target applications in terms of:
Extremely low FOM R DS(on) x E oss; lower Q g, E on and E off
Highly performant technology
Low switching losses (E oss)
Highly efficient
Excellent thermal behaviour
Allowing high speed switching
Integrated protection Zener diode
Optimized V (GS)the of 3V with very narrow tolerance of ±0.5V
Finely graduated portfolio
Cost competitive technology
Up to 2.4% efficiency gain and 12K lower device temperature compared to C6 technology
Further efficiency gain at higher switching speed
Supporting less magnetic size with lower BOM costs
High ESD ruggedness up to HBM Class 2 level
Easy to drive and design-in
Enabler for smaller form factors and high power density designs
Excellent choice in selecting the best fitting product
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