Infineon CoolMOS P7 Type N-Channel MOSFET & Diode, 9.4 A, 700 V Enhancement, 3-Pin TO-251 IPSA70R1K2P7SAKMA1

RS庫存編號:: 220-7443
製造零件編號:: IPSA70R1K2P7SAKMA1
製造商:: Infineon

Infineon CoolMOS P7 Type N-Channel MOSFET & Diode, 9.4 A, 700 V Enhancement, 3-Pin TO-251 IPSA70R1K2P7SAKMA1

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可享批量折扣

小計（1 包，共 25 件）*

TWD360.00

(不含稅)

TWD378.00

訂單超過 $1,300.00 免費送貨

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單位	每單位	每包*
25 - 100	TWD14.40	TWD360.00
125 +	TWD14.10	TWD352.50

* 參考價格

RS庫存編號:: 220-7443
製造零件編號:: IPSA70R1K2P7SAKMA1
製造商:: Infineon

規格

產品概覽和技術數據資料表

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產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Infineon
	Product Type	MOSFET & Diode
	Channel Type	Type N
	Maximum Continuous Drain Current Id	9.4A
	Maximum Drain Source Voltage Vds	700V
	Series	CoolMOS P7
	Package Type	TO-251
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	1.2Ω
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	4.8nC
	Minimum Operating Temperature	-40°C
	Maximum Gate Source Voltage Vgs	16 V
	Maximum Power Dissipation Pd	25W
	Forward Voltage Vf	0.9V
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Height	6.1mm
	Width	2.38 mm
	Length	6.6mm
	Automotive Standard	No

	選取全部
	品牌 Infineon
	Product Type MOSFET & Diode
	Channel Type Type N
	Maximum Continuous Drain Current Id 9.4A
	Maximum Drain Source Voltage Vds 700V
	Series CoolMOS P7
	Package Type TO-251
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 1.2Ω
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 4.8nC
	Minimum Operating Temperature -40°C
	Maximum Gate Source Voltage Vgs 16 V
	Maximum Power Dissipation Pd 25W
	Forward Voltage Vf 0.9V
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Height 6.1mm
	Width 2.38 mm
	Length 6.6mm
	Automotive Standard No

Datasheet - IPSA70R1K2P7SAKMA1

The Infineon has developed he 700V Cool MOS P7 super junction MOSFET series to serve today’s and especially tomorrow’s trends in fly back topologies. It addresses the low power SMPS market, such as mobile phone chargers or notebook adapters by offering fundamental performance gains compared to super junction technologies used today. By combining customers’ feedback with over 20 years of super junction MOSFET experience, 700V Cool MOS P7 enables best fit for target applications in terms of:

Extremely low FOM R DS(on) x E oss; lower Q g, E on and E off

Highly performant technology

Low switching losses (E oss)

Highly efficient

Excellent thermal behaviour

Allowing high speed switching

Integrated protection Zener diode

Optimized V (GS)the of 3V with very narrow tolerance of ±0.5V

Finely graduated portfolio

Cost competitive technology

Up to 2.4% efficiency gain and 12K lower device temperature compared to C6 technology

Further efficiency gain at higher switching speed

Supporting less magnetic size with lower BOM costs

High ESD ruggedness up to HBM Class 2 level

Easy to drive and design-in

Enabler for smaller form factors and high power density designs

Excellent choice in selecting the best fitting product

Infineon CoolMOS P7 Type N-Channel MOSFET & Diode, 9.4 A, 700 V Enhancement, 3-Pin TO-251 IPSA70R1K2P7SAKMA1

訂單超過 $1,300.00 免費送貨

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