Infineon IPD N-Channel MOSFET, 14 A, 950 V Enhancement, 3-Pin TO-252 IPD95R450P7ATMA1
- RS庫存編號:
- 217-2535
- 製造零件編號:
- IPD95R450P7ATMA1
- 製造商:
- Infineon
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可享批量折扣
查看批量定價選項小計（1 卷，共 2500 件）*
TWD96,750.00
(不含稅)
TWD101,600.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2027年3月09日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 2500 - 2500 | TWD38.70 | TWD96,750.00 |
| 5000 + | TWD37.50 | TWD93,750.00 |
* 參考價格
- RS庫存編號:
- 217-2535
- 製造零件編號:
- IPD95R450P7ATMA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 14A | |
| Maximum Drain Source Voltage Vds | 950V | |
| Package Type | TO-252 | |
| Series | IPD | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 450mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 104W | |
| Typical Gate Charge Qg @ Vgs | 35nC | |
| Forward Voltage Vf | 900mV | |
| Maximum Operating Temperature | 150°C | |
| Height | 2.41mm | |
| Length | 6.73mm | |
| Standards/Approvals | No | |
| Width | 6.22mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 14A | ||
Maximum Drain Source Voltage Vds 950V | ||
Package Type TO-252 | ||
Series IPD | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 450mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 104W | ||
Typical Gate Charge Qg @ Vgs 35nC | ||
Forward Voltage Vf 900mV | ||
Maximum Operating Temperature 150°C | ||
Height 2.41mm | ||
Length 6.73mm | ||
Standards/Approvals No | ||
Width 6.22mm | ||
Automotive Standard AEC-Q101 | ||
Infineon IPD Series MOSFET, 950V Drain Source Voltage, 14A Continuous Drain Current - IPD95R450P7ATMA1
This MOSFET is a high-voltage N-channel enhancement device designed for switching and power-management roles in demanding electrical systems. It operates across a wide temperature span for industrial and automotive contexts and is supplied in a surface-mount TO-252 package for Compact board-level integration.
Features and Benefits:
• 950 V drain-source rating enabling high-voltage switching capability
• 14 A continuous drain current for sustained load handling
• 104 W power dissipation to manage thermal stress under load
• 450 mΩ RDS(on) reducing conduction losses during operation
• 35 nC typical gate charge allowing predictable switching behaviour
• 20 V maximum gate-source voltage supporting robust gate drive
• 14 A continuous drain current for sustained load handling
• 104 W power dissipation to manage thermal stress under load
• 450 mΩ RDS(on) reducing conduction losses during operation
• 35 nC typical gate charge allowing predictable switching behaviour
• 20 V maximum gate-source voltage supporting robust gate drive
Applications
• Suitable for high-voltage power conversion stages
• Ideal for automotive power subsystems meeting AEC‑Q101 needs
• Used with switch-mode power supplies handling elevated voltages
• Can be used for industrial motor-drive interfaces
• Used for DC-DC converters requiring a surface-mount form factor
• Ideal for automotive power subsystems meeting AEC‑Q101 needs
• Used with switch-mode power supplies handling elevated voltages
• Can be used for industrial motor-drive interfaces
• Used for DC-DC converters requiring a surface-mount form factor
What temperature range can it reliably operate within?
It is rated for continuous use from −55 °C to 150 °C.
How many pins does the device present for PCB routing?
The component has three electrical connections for gate, drain and source.
What mounting method is required for assembly?
It is intended for surface mounting on appropriate solder pads.
What is the forward voltage of the intrinsic body diode?
The diode forward voltage is specified as 0.9 V.
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