Infineon IPD Type N-Channel MOSFET, 14 A, 950 V Enhancement, 3-Pin TO-252 IPD95R450P7ATMA1
- RS庫存編號:
- 217-2536
- 製造零件編號:
- IPD95R450P7ATMA1
- 製造商:
- Infineon
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可享批量折扣
小計（1 包，共 10 件）*
TWD607.00
(不含稅)
TWD637.40
(含稅)
訂單超過 $1,300.00 免費送貨
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- 1,640 件準備從其他地點送貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 10 - 620 | TWD60.70 | TWD607.00 |
| 630 - 1240 | TWD59.20 | TWD592.00 |
| 1250 + | TWD58.30 | TWD583.00 |
* 參考價格
- RS庫存編號:
- 217-2536
- 製造零件編號:
- IPD95R450P7ATMA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 14A | |
| Maximum Drain Source Voltage Vds | 950V | |
| Package Type | TO-252 | |
| Series | IPD | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 450mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 104W | |
| Forward Voltage Vf | 0.9V | |
| Typical Gate Charge Qg @ Vgs | 35nC | |
| Maximum Operating Temperature | 150°C | |
| Width | 6.22 mm | |
| Length | 6.73mm | |
| Standards/Approvals | No | |
| Height | 2.41mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 14A | ||
Maximum Drain Source Voltage Vds 950V | ||
Package Type TO-252 | ||
Series IPD | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 450mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 104W | ||
Forward Voltage Vf 0.9V | ||
Typical Gate Charge Qg @ Vgs 35nC | ||
Maximum Operating Temperature 150°C | ||
Width 6.22 mm | ||
Length 6.73mm | ||
Standards/Approvals No | ||
Height 2.41mm | ||
Automotive Standard AEC-Q101 | ||
The Infineon latest 950V CoolMOS™ P7 series sets a new bench mark in 950V super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineon’s over 18 years pioneering super junction technology innovation.
Best-in-class FOM RDS(on) Eoss; reduced Qg, Ciss and CossBest-in-class DPAK RDS(on) of 450 mΩ
Best-in-class VGS(th) of 3V and smallest VGS(th) variation of ±0.5V
Integrated Zener diode ESD protection up to Class 2 (HBM)
Best-in-class quality and reliability
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