Infineon IPD Type N-Channel MOSFET, 50 A, 60 V Enhancement, 3-Pin TO-252 IPD079N06L3GATMA1
- RS庫存編號:
- 273-3003
- 製造零件編號:
- IPD079N06L3GATMA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
小計（1 卷，共 2500 件）*
TWD40,250.00
(不含稅)
TWD42,250.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年6月16日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 2500 + | TWD16.10 | TWD40,250.00 |
* 參考價格
- RS庫存編號:
- 273-3003
- 製造零件編號:
- IPD079N06L3GATMA1
- 製造商:
- Infineon
規格
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法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 50A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-252 | |
| Series | IPD | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 7.9mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 50nC | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Operating Temperature | 175°C | |
| Width | 6.731 mm | |
| Standards/Approvals | RoHS | |
| Height | 6.223mm | |
| Length | 10.48mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 50A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-252 | ||
Series IPD | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 7.9mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 50nC | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Operating Temperature 175°C | ||
Width 6.731 mm | ||
Standards/Approvals RoHS | ||
Height 6.223mm | ||
Length 10.48mm | ||
Automotive Standard No | ||
The Infineon power MOSFET is a perfect choice for synchronous rectification in switched mode power supplies such as those found in servers and desktops and tablet charger. In addition these devices can be used for a broad range of industrial applications
Highest system efficiency
Less paralleling required
Increased power density
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