Infineon IPU Type N-Channel MOSFET, 9 A, 950 V Enhancement, 3-Pin PG-TO251-3 IPU95R750P7AKMA1
- RS庫存編號:
- 273-3023
- 製造零件編號:
- IPU95R750P7AKMA1
- 製造商:
- Infineon
可享批量折扣
小計（1 管，共 75 件）*
TWD2,347.50
(不含稅)
TWD2,464.50
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 1,425 件從 2026年3月23日 起發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每管* |
|---|---|---|
| 75 - 75 | TWD31.30 | TWD2,347.50 |
| 150 + | TWD30.40 | TWD2,280.00 |
* 參考價格
- RS庫存編號:
- 273-3023
- 製造零件編號:
- IPU95R750P7AKMA1
- 製造商:
- Infineon
規格
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 9A | |
| Maximum Drain Source Voltage Vds | 950V | |
| Series | IPU | |
| Package Type | PG-TO251-3 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.75Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 73W | |
| Forward Voltage Vf | 0.9V | |
| Typical Gate Charge Qg @ Vgs | 23nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS, JEDEC | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 9A | ||
Maximum Drain Source Voltage Vds 950V | ||
Series IPU | ||
Package Type PG-TO251-3 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.75Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 73W | ||
Forward Voltage Vf 0.9V | ||
Typical Gate Charge Qg @ Vgs 23nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS, JEDEC | ||
Automotive Standard No | ||
The Infineon power MOSFET is designed to meet the growing consumer needs in the high voltage MOSFETs arena, the latest 950V Cool MOS P7 technology focuses on the low power SMPS market. The integrated diode considerably improves ESD robustness, thus reduci
Easy to drive and to design in
Better production yield by reducing ESD related failures
Less production issues and reduced field returns
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