Infineon 800V CoolMOS P7 MOSFET, 4 A, 800 V, 3-Pin PG-TO251-3 IPU80R1K4P7AKMA1
- RS庫存編號:
- 273-7470
- 製造零件編號:
- IPU80R1K4P7AKMA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 管，共 75 件）*
TWD1,747.50
(不含稅)
TWD1,834.50
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 1,425 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每管* |
|---|---|---|
| 75 - 75 | TWD23.30 | TWD1,747.50 |
| 150 + | TWD18.40 | TWD1,380.00 |
* 參考價格
- RS庫存編號:
- 273-7470
- 製造零件編號:
- IPU80R1K4P7AKMA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 4A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Package Type | PG-TO251-3 | |
| Series | 800V CoolMOS P7 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.4mΩ | |
| Maximum Power Dissipation Pd | 32W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 10nC | |
| Forward Voltage Vf | 0.9V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | JEDEC for Industrial Applications, RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 4A | ||
Maximum Drain Source Voltage Vds 800V | ||
Package Type PG-TO251-3 | ||
Series 800V CoolMOS P7 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.4mΩ | ||
Maximum Power Dissipation Pd 32W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 10nC | ||
Forward Voltage Vf 0.9V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals JEDEC for Industrial Applications, RoHS | ||
Automotive Standard No | ||
The Infineon MOSFET has better production yield by reducing ESD related failures. This MOSFET has less production issues and reduced field returns and easy to select right parts for fine tuning of designs. It enabling higher power density designs, BOM savings and lower assembly costs.
Fully optimized portfolio
Best in class performance
Easy to drive and to parallel
Integrated zener diode ESD protection
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