Infineon HEXFET Type N-Channel MOSFET, 99 A, 60 V TO-252 IRLR3636TRLPBF

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小計(1 包,共 5 件)*

TWD130.00

(不含稅)

TWD136.50

(含稅)

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下方訂單 TWD1,300.00(不含稅)成本 TWD500.00。
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  • 加上 2,790 件從 2026年2月23日 起發貨
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單位
每單位
每包*
5 - 45TWD26.00TWD130.00
50 - 95TWD24.60TWD123.00
100 - 245TWD23.20TWD116.00
250 - 995TWD21.40TWD107.00
1000 +TWD19.80TWD99.00

* 參考價格

包裝方式:
RS庫存編號:
257-9458
製造零件編號:
IRLR3636TRLPBF
製造商:
Infineon
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品牌

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

99A

Maximum Drain Source Voltage Vds

60V

Package Type

TO-252

Series

HEXFET

Maximum Drain Source Resistance Rds

8.3mΩ

Maximum Power Dissipation Pd

143W

Typical Gate Charge Qg @ Vgs

33nC

Forward Voltage Vf

1.3V

Maximum Gate Source Voltage Vgs

16 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon IRLR series is the 60V single n channel power mosfet in a D-Pak package. The strong IRFET power mosfet family is optimized for low RDS (on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including dc motors, battery management systems, inverters, and dc-dc converters.

Optimized for broadest availability from distribution partners

Product qualification according to JEDEC standard

Industry standard surface mount package

Silicon optimized for applications switching below 100 kHz

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