Infineon HEXFET Type N-Channel MOSFET, 99 A, 60 V TO-252

小計(1 卷,共 3000 件)*

TWD65,100.00

(不含稅)

TWD68,340.00

(含稅)

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下方訂單 TWD1,300.00(不含稅)成本 TWD500.00。
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  • 2026年5月25日 發貨
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RS庫存編號:
257-9456
製造零件編號:
IRLR3636TRLPBF
製造商:
Infineon
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品牌

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

99A

Maximum Drain Source Voltage Vds

60V

Series

HEXFET

Package Type

TO-252

Maximum Drain Source Resistance Rds

8.3mΩ

Typical Gate Charge Qg @ Vgs

33nC

Maximum Power Dissipation Pd

143W

Maximum Gate Source Voltage Vgs

16 V

Forward Voltage Vf

1.3V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon IRLR series is the 60V single n channel power mosfet in a D-Pak package. The strong IRFET power mosfet family is optimized for low RDS (on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including dc motors, battery management systems, inverters, and dc-dc converters.

Optimized for broadest availability from distribution partners

Product qualification according to JEDEC standard

Industry standard surface mount package

Silicon optimized for applications switching below 100 kHz

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