製造零件編號

Infineon HEXFET Type N-Channel MOSFET, 131 A, 55 V TO-263

RS庫存編號:: 257-9275
製造零件編號:: IRF1405STRLPBF
製造商:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 131 A, 55 V TO-263

此圖片僅供參考，請參閲產品詳細資訊及規格

小計（1 卷，共 800 件）*

TWD26,640.00

(不含稅)

TWD27,968.00

訂單超過 $1,300.00 免費送貨

暫時缺貨

從 2026年6月02日發貨

**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。

單位	每單位	每卷*
800 +	TWD33.30	TWD26,640.00

* 參考價格

RS庫存編號:: 257-9275
製造零件編號:: IRF1405STRLPBF
製造商:: Infineon

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	131A
	Maximum Drain Source Voltage Vds	55V
	Package Type	TO-263
	Series	HEXFET
	Mount Type	Surface
	Maximum Drain Source Resistance Rds	5.3mΩ
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Forward Voltage Vf	1.3V
	Typical Gate Charge Qg @ Vgs	170nC
	Maximum Power Dissipation Pd	200W
	Maximum Operating Temperature	175°C
	Standards/Approvals	No
	Automotive Standard	No

	選取全部
	品牌 Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 131A
	Maximum Drain Source Voltage Vds 55V
	Package Type TO-263
	Series HEXFET
	Mount Type Surface
	Maximum Drain Source Resistance Rds 5.3mΩ
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Forward Voltage Vf 1.3V
	Typical Gate Charge Qg @ Vgs 170nC
	Maximum Power Dissipation Pd 200W
	Maximum Operating Temperature 175°C
	Standards/Approvals No
	Automotive Standard No

Datasheet - IRF1405STRLPBF

The Infineon IRF series is the 55V single n channel HEXFET power mosfet in a D2 Pak package.

Planar cell structure for wide SOA

Optimized for broadest availability from distribution partners

Product qualification according to JEDEC standard

Silicon optimized for applications switching below 100 kHz

Industry standard surface mount power package

Capable of being wave soldered

Infineon HEXFET Type N-Channel MOSFET, 131 A, 55 V TO-263

訂單超過 $1,300.00 免費送貨

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