Infineon HEXFET Type N-Channel MOSFET, 89 A, 55 V, 3-Pin TO-263

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小計(1 卷,共 800 件)*

TWD23,200.00

(不含稅)

TWD24,360.00

(含稅)

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800 - 800TWD29.00TWD23,200.00
1600 - 2400TWD28.20TWD22,560.00
3200 +TWD27.30TWD21,840.00

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RS庫存編號:
217-2635
製造零件編號:
IRL3705NSTRLPBF
製造商:
Infineon
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品牌

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

89A

Maximum Drain Source Voltage Vds

55V

Package Type

TO-263

Series

HEXFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

10mΩ

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

170W

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

98nC

Maximum Operating Temperature

175°C

Height

17.79mm

Width

4.83 mm

Standards/Approvals

No

Length

10.67mm

Automotive Standard

No

The Infineon 55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package.

Planar cell structure for wide SOA

Optimized for broadest availability from distribution partners

Product qualification according to JEDEC standard

Silicon optimized for applications switching below <100kHz

Industry standard surface-mount power package

High-current carrying capability package (up to 195 A, die-size dependent)

Capable of being wave-soldered

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