製造零件編號

Infineon HEXFET Type N-Channel MOSFET, 51 A, 55 V, 3-Pin TO-263

RS庫存編號:: 214-4463
製造零件編號:: IRFZ46ZSTRLPBF
製造商:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 51 A, 55 V, 3-Pin TO-263

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

小計（1 卷，共 800 件）*

TWD23,280.00

(不含稅)

TWD24,448.00

訂單超過 $1,300.00 免費送貨

有庫存

800 件準備從其他地點送貨

**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。

單位	每單位	每卷*
800 - 3200	TWD29.10	TWD23,280.00
4000 +	TWD26.20	TWD20,960.00

* 參考價格

RS庫存編號:: 214-4463
製造零件編號:: IRFZ46ZSTRLPBF
製造商:: Infineon

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	51A
	Maximum Drain Source Voltage Vds	55V
	Package Type	TO-263
	Series	HEXFET
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	13.6mΩ
	Typical Gate Charge Qg @ Vgs	46nC
	Maximum Power Dissipation Pd	82W
	Maximum Gate Source Voltage Vgs	20 V
	Forward Voltage Vf	1.3V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Standards/Approvals	No
	Automotive Standard	No

	選取全部
	品牌 Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 51A
	Maximum Drain Source Voltage Vds 55V
	Package Type TO-263
	Series HEXFET
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 13.6mΩ
	Typical Gate Charge Qg @ Vgs 46nC
	Maximum Power Dissipation Pd 82W
	Maximum Gate Source Voltage Vgs 20 V
	Forward Voltage Vf 1.3V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Standards/Approvals No
	Automotive Standard No

Datasheet - IRFZ46ZSTRLPBF

This Infineon Strong IRFET power MOSFET is optimized for low RDS(on) and high current capability. It is ideal for low frequency applications requiring performance and ruggedness.

It is optimized for synchronous rectification

Infineon HEXFET Type N-Channel MOSFET, 51 A, 55 V, 3-Pin TO-263

訂單超過 $1,300.00 免費送貨

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