Infineon HEXFET Type N-Channel MOSFET, 64 A, 55 V TO-263
- RS庫存編號:
- 258-3989
- 製造零件編號:
- IRFZ48NSTRLPBF
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 卷，共 800 件）*
TWD13,760.00
(不含稅)
TWD14,448.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年3月27日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 800 - 800 | TWD17.20 | TWD13,760.00 |
| 1600 - 1600 | TWD15.50 | TWD12,400.00 |
| 2400 + | TWD15.20 | TWD12,160.00 |
* 參考價格
- RS庫存編號:
- 258-3989
- 製造零件編號:
- IRFZ48NSTRLPBF
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 64A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Series | HEXFET | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 0.014Ω | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 130W | |
| Typical Gate Charge Qg @ Vgs | 81nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 64A | ||
Maximum Drain Source Voltage Vds 55V | ||
Series HEXFET | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 0.014Ω | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 130W | ||
Typical Gate Charge Qg @ Vgs 81nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon HEXFET power MOSFETs from international rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.
Advanced Process Technology
Surface Mount
Low-profile through-hole
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
相關連結
- Infineon HEXFET Type N-Channel MOSFET 55 V TO-263 IRFZ48NSTRLPBF
- Infineon HEXFET Type N-Channel MOSFET 55 V TO-263
- Infineon HEXFET Type N-Channel MOSFET 55 V TO-263 IRL3705NSTRLPBF
- Infineon HEXFET Type P-Channel MOSFET -55 V TO-263
- Infineon HEXFET Type N-Channel MOSFET 55 V, 3-Pin TO-263
- Infineon HEXFET Type P-Channel MOSFET -55 V TO-263 AUIRF4905STRL
- Infineon HEXFET Type N-Channel MOSFET 55 V, 3-Pin TO-263 IRFZ46ZSTRLPBF
- Infineon HEXFET Type N-Channel MOSFET 55 V, 7-Pin TO-263