Vishay Si4948BEY Type P-Channel MOSFET, -2.4 A, -60 V, 8-Pin SOIC SI4948BEY-T1-E3
- RS庫存編號:
- 256-7363
- 製造零件編號:
- SI4948BEY-T1-E3
- 製造商:
- Vishay
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TWD186.00
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TWD195.30
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- 加上 1,100 件從 2026年6月29日 起發貨
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|---|---|---|
| 5 - 45 | TWD37.20 | TWD186.00 |
| 50 - 95 | TWD35.20 | TWD176.00 |
| 100 - 245 | TWD33.20 | TWD166.00 |
| 250 - 995 | TWD30.80 | TWD154.00 |
| 1000 + | TWD28.60 | TWD143.00 |
* 參考價格
- RS庫存編號:
- 256-7363
- 製造零件編號:
- SI4948BEY-T1-E3
- 製造商:
- Vishay
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | -2.4A | |
| Maximum Drain Source Voltage Vds | -60V | |
| Package Type | SOIC | |
| Series | Si4948BEY | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.15Ω | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | -1.2V | |
| Maximum Power Dissipation Pd | 1.4W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 14.5nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS 2002/95/EC, IEC 61249-2-21 | |
| Height | 1.75mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id -2.4A | ||
Maximum Drain Source Voltage Vds -60V | ||
Package Type SOIC | ||
Series Si4948BEY | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.15Ω | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf -1.2V | ||
Maximum Power Dissipation Pd 1.4W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 14.5nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS 2002/95/EC, IEC 61249-2-21 | ||
Height 1.75mm | ||
Automotive Standard No | ||
Vishay Si4948BEY Series MOSFET, -60V Drain Source Voltage, -2.4A Continuous Drain Current - SI4948BEY-T1-E3
This MOSFET is a P‑channel surface‑mount transistor designed for switching and power‑control tasks in electronic systems. It operates within a wide temperature envelope and is intended for use on Compact boards where an SOIC package and moderate power handling are required. The device suits engineers needing a P‑channel option with specific gate charge and thermal limits for circuit‑level design.
Features and Benefits:
• P‑channel device supporting negative drain‑source voltage for high‑side switching • Rated drain‑source voltage of -60V enabling elevated voltage applications • Maximum continuous drain current -2.4A allowing moderate load handling • Low on‑resistance 0.15Ω reducing conduction losses • Typical gate charge 14.5nC facilitating predictable switching behaviour • Power dissipation 1.4W managing thermal budget in confined layouts
Applications
• Suitable for high‑side switches in motor control modules • Ideal for load disconnects in power management circuits • Used for reverse polarity protection in supply rails • Can be used for battery management and charging control • Suitable for SMD assemblies requiring Compact P‑channel transistors
What gate voltage limits should be observed during design?
The gate‑source voltage must not exceed ±20V to prevent gate oxide stress and ensure reliable operation.
How does the device behave at elevated temperatures?
It is specified to operate up to 175°C maximum, so designers should account for derating of current and power with temperature rise.
What package and pin count are available for PCB layout considerations?
The component is supplied in an SOIC‑8 package with eight pins, suitable for standard SMD footprint designs.
Which standards relate to material and process acceptability?
The component complies with RoHS 2002/95/EC and follows IEC 61249‑2‑21 material specifications.
What forward voltage or body diode characteristic is indicated?
A forward voltage of -1.2V is specified for the intrinsic diode conduction behaviour.
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