Vishay Si4948BEY Type P-Channel MOSFET, -2.4 A, -60 V, 8-Pin SOIC SI4948BEY-T1-E3

RS庫存編號:: 256-7362
製造零件編號:: SI4948BEY-T1-E3
製造商:: Vishay

Vishay Si4948BEY Type P-Channel MOSFET, -2.4 A, -60 V, 8-Pin SOIC SI4948BEY-T1-E3

此圖片僅供參考，請參閲產品詳細資訊及規格

小計（1 卷，共 2500 件）*

TWD54,750.00

(不含稅)

TWD57,500.00

訂單超過 $1,300.00 免費送貨

暫時缺貨

從 2026年11月03日發貨

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單位	每單位	每卷*
2500 +	TWD21.90	TWD54,750.00

* 參考價格

RS庫存編號:: 256-7362
製造零件編號:: SI4948BEY-T1-E3
製造商:: Vishay

規格

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產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Vishay
	Product Type	MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	-2.4A
	Maximum Drain Source Voltage Vds	-60V
	Series	Si4948BEY
	Package Type	SOIC
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.15Ω
	Forward Voltage Vf	-1.2V
	Typical Gate Charge Qg @ Vgs	14.5nC
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20V
	Maximum Power Dissipation Pd	1.4W
	Maximum Operating Temperature	175°C
	Height	1.75mm
	Standards/Approvals	RoHS 2002/95/EC, IEC 61249-2-21
	Automotive Standard	No

	選取全部
	品牌 Vishay
	Product Type MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id -2.4A
	Maximum Drain Source Voltage Vds -60V
	Series Si4948BEY
	Package Type SOIC
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.15Ω
	Forward Voltage Vf -1.2V
	Typical Gate Charge Qg @ Vgs 14.5nC
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20V
	Maximum Power Dissipation Pd 1.4W
	Maximum Operating Temperature 175°C
	Height 1.75mm
	Standards/Approvals RoHS 2002/95/EC, IEC 61249-2-21
	Automotive Standard No

Datasheet - SI4948BEY-T1-E3

Vishay Si4948BEY Series MOSFET, 60V Maximum Drain Source Voltage, 2.4A Maximum Continuous Drain Current - SI4948BEY-T1-E3

This p-channel MOSFET is a surface-mount transistor designed for switching and analogue functions in compact electronic assemblies. It is intended for applications requiring moderate current handling and voltage blocking within a semiconductor package that mounts directly to the circuit board. The device operates across a wide temperature span and complies with common electronic material standards, making it suitable for use in demanding thermal environments.

Features and Benefits:

• Low on-resistance 0.15Ω enabling reduced conduction losses
• Blocking capability 60V for medium-voltage switching
• Continuous drain current 2.4A for sustained load handling
• Gate drive tolerance 20V allowing flexible control voltages
• Typical gate charge 14.5nC for predictable switching behaviour
• Power dissipation 1.4W supporting moderate thermal loads

Applications

• Suitable for power-rail load switching in consumer electronics
• Ideal for reverse-polarity or high-side switch implementations
• Used with compact DC-DC converters in space-limited boards
• Can be used for battery protection and energy-management circuits
• Suitable for signal-level power control in industrial modules

What package and pin count should I plan for on the PCB?

The component comes in an 8-pin SOIC package intended for surface mounting, so footprint design should match standard 8-pin SOIC land patterns for reliable solder joints.

How does it perform across temperature extremes?

It is rated to operate from -55°C up to 175°C, permitting use in assemblies that experience elevated junction temperatures or cold-start conditions.

Which forward voltage characteristic is relevant for circuit margin calculations?

The device exhibits a forward voltage of -1.2V under conditions relevant to its conduction path, which can be used when estimating voltage drops in power paths.

Are there material or environmental standards applicable to procurement?

The part conforms to RoHS 2002/95/EC and follows IEC 61249-2-21 guidelines for relevant material and composition considerations.