Vishay Type N-Channel MOSFET, 8.7 A, 60 V, 8-Pin PowerPAK 1212-8 SI7414DN-T1-E3
- RS庫存編號:
- 180-7745
- 製造零件編號:
- SI7414DN-T1-E3
- 製造商:
- Vishay
此圖片僅供參考,請參閲產品詳細資訊及規格
可享批量折扣
小計(1 包,共 5 件)*
TWD303.00
(不含稅)
TWD318.15
(含稅)
訂單超過 $1,300.00 免費送貨
最後的 RS 庫存
- 最終 1,385 個,準備發貨
單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 745 | TWD60.60 | TWD303.00 |
| 750 - 1495 | TWD58.80 | TWD294.00 |
| 1500 + | TWD58.40 | TWD292.00 |
* 參考價格
- RS庫存編號:
- 180-7745
- 製造零件編號:
- SI7414DN-T1-E3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 8.7A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | PowerPAK 1212-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.025Ω | |
| Maximum Power Dissipation Pd | 3.8W | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 25nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Width | 3.61 mm | |
| Standards/Approvals | IEC 61249-2-21 | |
| Height | 1.12mm | |
| Length | 3.61mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 8.7A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type PowerPAK 1212-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.025Ω | ||
Maximum Power Dissipation Pd 3.8W | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 25nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Width 3.61 mm | ||
Standards/Approvals IEC 61249-2-21 | ||
Height 1.12mm | ||
Length 3.61mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Vishay MOSFET
The Vishay surface mount N-channel PowerPAK-1212-8 MOSFET is a new age product with a drain-source voltage of 60V and a maximum gate-source voltage of 20V. It has a drain-source resistance of 25mohms at a gate-source voltage of 10V. It has a maximum power dissipation of 1.5W and continuous drain current of 5.6A. It has a minimum and a maximum driving voltage of 4.5V and 10V respectively. This product has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
• Halogen free
• Operating temperature ranges between -55°C and 150°C
• PWM optimised
• TrenchFET power MOSFET
Applications
• Motor drives
• Primary side switches
• Synchronous rectifier
Certifications
• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• IEC 61249-2-21
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