製造零件編號

Vishay Si7309DN Type P-Channel MOSFET, 8 A, 60 V Enhancement, 8-Pin PowerPAK 1212-8

RS庫存編號:: 165-2765
製造零件編號:: SI7309DN-T1-E3
製造商:: Vishay

Vishay Si7309DN Type P-Channel MOSFET, 8 A, 60 V Enhancement, 8-Pin PowerPAK 1212-8

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

小計（1 卷，共 3000 件）*

TWD50,700.00

(不含稅)

TWD53,220.00

訂單超過 $1,300.00 免費送貨

最後的 RS 庫存

最終 6,000 個，準備發貨

單位	每單位	每卷*
3000 - 12000	TWD16.90	TWD50,700.00
15000 +	TWD16.50	TWD49,500.00

* 參考價格

RS庫存編號:: 165-2765
製造零件編號:: SI7309DN-T1-E3
製造商:: Vishay

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Vishay
	Channel Type	Type P
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	8A
	Maximum Drain Source Voltage Vds	60V
	Series	Si7309DN
	Package Type	PowerPAK 1212-8
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.115Ω
	Channel Mode	Enhancement
	Forward Voltage Vf	1.2V
	Minimum Operating Temperature	-65°C
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	19.8W
	Typical Gate Charge Qg @ Vgs	14.5nC
	Maximum Operating Temperature	150°C
	Width	3.05 mm
	Height	1.04mm
	Length	3.05mm
	Standards/Approvals	IEC 61249-2-21
	Automotive Standard	No

	選取全部
	品牌 Vishay
	Channel Type Type P
	Product Type MOSFET
	Maximum Continuous Drain Current Id 8A
	Maximum Drain Source Voltage Vds 60V
	Series Si7309DN
	Package Type PowerPAK 1212-8
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.115Ω
	Channel Mode Enhancement
	Forward Voltage Vf 1.2V
	Minimum Operating Temperature -65°C
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 19.8W
	Typical Gate Charge Qg @ Vgs 14.5nC
	Maximum Operating Temperature 150°C
	Width 3.05 mm
	Height 1.04mm
	Length 3.05mm
	Standards/Approvals IEC 61249-2-21
	Automotive Standard No

COO (Country of Origin):: CN

Vishay Si7309DN Type P-Channel MOSFET, 8 A, 60 V Enhancement, 8-Pin PowerPAK 1212-8

訂單超過 $1,300.00 免費送貨

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