Vishay Type N-Channel MOSFET, 12 A, 30 V, 8-Pin PowerPAK 1212-8 SIS412DN-T1-GE3
- RS庫存編號:
- 180-7909
- 製造零件編號:
- SIS412DN-T1-GE3
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 20 件）*
TWD230.00
(不含稅)
TWD241.60
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 3,680 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 20 - 740 | TWD11.50 | TWD230.00 |
| 760 - 1480 | TWD11.20 | TWD224.00 |
| 1500 + | TWD11.00 | TWD220.00 |
* 參考價格
- RS庫存編號:
- 180-7909
- 製造零件編號:
- SIS412DN-T1-GE3
- 製造商:
- Vishay
規格
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法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 12A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | PowerPAK 1212-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.03Ω | |
| Maximum Power Dissipation Pd | 15.6W | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Typical Gate Charge Qg @ Vgs | 3.8nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.61mm | |
| Width | 3.61 mm | |
| Standards/Approvals | IEC 61249-2-21 | |
| Height | 0.79mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 12A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type PowerPAK 1212-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.03Ω | ||
Maximum Power Dissipation Pd 15.6W | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Typical Gate Charge Qg @ Vgs 3.8nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Length 3.61mm | ||
Width 3.61 mm | ||
Standards/Approvals IEC 61249-2-21 | ||
Height 0.79mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Vishay MOSFET
The Vishay MOSFET is an N-channel, PowerPAK-1212-8 package is a new age product with a drain-source voltage of 30V and maximum gate-source voltage of 20V. It has a drain-source resistance of 24mohm at a gate-source voltage of 10V. It has a maximum power dissipation of 15.6W. This product has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
• Halogen and lead (Pb) free component
• Operating temperature ranges between -55°C and 150°C
• TrenchFET power MOSFET
Applications
• Load switches
• Notebook PCs
• System power
相關連結
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