Vishay Type P-Channel MOSFET, 8.9 A, 150 V, 8-Pin PowerPAK 1212-8 SI7315DN-T1-GE3
- RS庫存編號:
- 180-7728
- 製造零件編號:
- SI7315DN-T1-GE3
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 10 件）*
TWD351.00
(不含稅)
TWD368.60
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 2,520 件從 2026年1月05日 起發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 10 - 740 | TWD35.10 | TWD351.00 |
| 750 - 1490 | TWD34.20 | TWD342.00 |
| 1500 + | TWD33.80 | TWD338.00 |
* 參考價格
- RS庫存編號:
- 180-7728
- 製造零件編號:
- SI7315DN-T1-GE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 8.9A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Package Type | PowerPAK 1212-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.315Ω | |
| Maximum Gate Source Voltage Vgs | ±30 V | |
| Maximum Power Dissipation Pd | 52W | |
| Typical Gate Charge Qg @ Vgs | 15.4nC | |
| Minimum Operating Temperature | 50°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Height | 1.12mm | |
| Length | 3.61mm | |
| Width | 3.61 mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 8.9A | ||
Maximum Drain Source Voltage Vds 150V | ||
Package Type PowerPAK 1212-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.315Ω | ||
Maximum Gate Source Voltage Vgs ±30 V | ||
Maximum Power Dissipation Pd 52W | ||
Typical Gate Charge Qg @ Vgs 15.4nC | ||
Minimum Operating Temperature 50°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Height 1.12mm | ||
Length 3.61mm | ||
Width 3.61 mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Vishay SI7315DN is a dual P-channel MOSFET having drain to source(Vds) voltage of -150V.The gate to source voltage(VGS) is 30V. It is having power PAK 1212-8 package. It offers drain to source resistance (RDS.) 0.315ohms at 10VGS and 0.35ohms at 7.5VGS. Maximum drain current -8.9A.
Trench FET power MOSFET
Low thermal resistance Power PAK package with small size
100 % Rg and UIS tested
相關連結
- Vishay Type P-Channel MOSFET 150 V, 8-Pin PowerPAK 1212-8
- Vishay Si7615ADN Type P-Channel MOSFET 20 V Enhancement, 8-Pin PowerPAK 1212-8 SI7615ADN-T1-GE3
- Vishay Type P-Channel MOSFET 100 V, 8-Pin PowerPAK 1212-8 SI7113DN-T1-GE3
- Vishay Type P-Channel MOSFET 40 V, 8-Pin PowerPAK 1212-8 SIS443DN-T1-GE3
- Vishay TrenchFET Type P-Channel MOSFET 30 V, 8-Pin PowerPAK 1212-8 SIS413DN-T1-GE3
- Vishay TrenchFET Type P-Channel MOSFET 200 V, 8-Pin PowerPAK 1212-8 SI7119DN-T1-GE3
- Vishay Type P-Channel MOSFET 60 V Enhancement, 8-Pin PowerPAK 1212-8 SI7415DN-T1-GE3
- Vishay Single TrenchFET Type P-Channel MOSFET 20 V, 8-Pin PowerPAK 1212-8 SIS407ADN-T1-GE3