Vishay Type P-Channel MOSFET, 13.2 A, 100 V, 8-Pin PowerPAK 1212-8 SI7113DN-T1-GE3
- RS庫存編號:
- 180-7804
- 製造零件編號:
- SI7113DN-T1-GE3
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 5 件）*
TWD158.00
(不含稅)
TWD165.90
(含稅)
庫存資訊目前無法存取 - 請稍後再回來查看
單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 745 | TWD31.60 | TWD158.00 |
| 750 - 1495 | TWD31.00 | TWD155.00 |
| 1500 + | TWD30.20 | TWD151.00 |
* 參考價格
- RS庫存編號:
- 180-7804
- 製造零件編號:
- SI7113DN-T1-GE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 13.2A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | PowerPAK 1212-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.145Ω | |
| Maximum Power Dissipation Pd | 52W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | 50°C | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 16.5nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS, JEDEC JS709A | |
| Length | 3.61mm | |
| Height | 1.12mm | |
| Width | 3.61mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 13.2A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type PowerPAK 1212-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.145Ω | ||
Maximum Power Dissipation Pd 52W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature 50°C | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 16.5nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS, JEDEC JS709A | ||
Length 3.61mm | ||
Height 1.12mm | ||
Width 3.61mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Vishay MOSFET
The Vishay surface mount P-channel PowerPAK-1212-8 MOSFET is a new age product with a drain-source voltage of 100V and a maximum gate-source voltage of 20V. It has a drain-source resistance of 134mohms at a gate-source voltage of 10V. It has a maximum power dissipation of 52W and continuous drain current of 13.2A. This product has been optimized for lower switching and conduction losses. It has applications in the Active clamp in intermediate DC/DC power supplies. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
• Halogen and Lead (Pb) free
• Low thermal resistance powerpak package with small size and low 1.07mm profile
• Maximum and minimum driving voltage is 4.5V and 10V
• Maximum dissipation power is 52W
• Operating temperature ranges between -50°C and 150°C
• TrenchFET power MOSFET
Certifications
• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• Rg tested
• UIS tested
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