Vishay SI1427EDH Type P-Channel MOSFET, -2 A, -20 V, 6-Pin SC-70 SI1427EDH-T1-GE3
- RS庫存編號:
- 256-7341
- 製造零件編號:
- SI1427EDH-T1-GE3
- 製造商:
- Vishay
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TWD195.00
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單位 | 每單位 | 每包* |
|---|---|---|
| 25 - 25 | TWD7.80 | TWD195.00 |
| 50 - 75 | TWD7.40 | TWD185.00 |
| 100 - 225 | TWD7.00 | TWD175.00 |
| 250 - 975 | TWD6.40 | TWD160.00 |
| 1000 + | TWD5.90 | TWD147.50 |
* 參考價格
- RS庫存編號:
- 256-7341
- 製造零件編號:
- SI1427EDH-T1-GE3
- 製造商:
- Vishay
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | -2A | |
| Maximum Drain Source Voltage Vds | -20V | |
| Series | SI1427EDH | |
| Package Type | SC-70 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 0.165Ω | |
| Maximum Power Dissipation Pd | 2.8W | |
| Forward Voltage Vf | -1.2V | |
| Maximum Gate Source Voltage Vgs | 8V | |
| Typical Gate Charge Qg @ Vgs | 7.6nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | +150°C | |
| Standards/Approvals | RoHS | |
| Height | 1.1mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id -2A | ||
Maximum Drain Source Voltage Vds -20V | ||
Series SI1427EDH | ||
Package Type SC-70 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 0.165Ω | ||
Maximum Power Dissipation Pd 2.8W | ||
Forward Voltage Vf -1.2V | ||
Maximum Gate Source Voltage Vgs 8V | ||
Typical Gate Charge Qg @ Vgs 7.6nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature +150°C | ||
Standards/Approvals RoHS | ||
Height 1.1mm | ||
Automotive Standard No | ||
Vishay SI1427EDH Series MOSFET, -20V Maximum Drain Source Voltage, -2A Maximum Continuous Drain Current - SI1427EDH-T1-GE3
This p‑channel MOSFET is a Compact surface‑mount transistor intended for switching and analogue applications in electronic systems. It operates as a P‑channel device with a maximum drain‑source voltage of -20 V, suitable for low‑voltage designs that require controlled current flow and gate‑driven switching performance. The device is aimed at professional applications in automation and electrical systems where board space and thermal endurance are important.
Features and Benefits:
• Low Rds(on) 0.165 Ω for reduced conduction losses • Maximum continuous drain current -2 A supports moderate load currents • Maximum power dissipation 2.8W enables sustained operation under load • Typical gate charge 7.6 nC allows efficient gate‑drive switching • Maximum operating temperature +150 °C for high‑temperature environments • RoHS approved for compliance with hazardous‑substances limits
Applications
• Suitable for high‑temperature power‑management circuitry • Ideal for low‑voltage load switching in automation equipment • Used for polarity protection in battery‑powered systems • Can be used for gate‑driven analogue switching in control modules • Suitable for Compact surface‑mount designs requiring P‑channel devices
What mounting method does it use for PCB assembly?
It is supplied in an SC‑70 package intended for surface mounting, optimised for automated pick‑and‑place assembly processes.
What gate voltage range is permissible for reliable operation?
The device accepts a maximum gate‑source voltage of 8 V
gate drive should remain within this limit to avoid damage.
How does it perform under low forward‑bias conditions?
The specified forward voltage is -1.2 V, indicating the drop expected during conduction in forward‑biased conditions.
What are the environmental temperature limits for storage and use?
The device is specified to operate down to -55 °C and up to +150 °C, covering a wide operational temperature span.
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