製造零件編號

Vishay SiA471DJ Type P-Channel MOSFET, 30.3 A, 30 V Enhancement, 6-Pin SC-70

RS庫存編號:: 188-4859
製造零件編號:: SiA471DJ-T1-GE3
製造商:: Vishay

Vishay SiA471DJ Type P-Channel MOSFET, 30.3 A, 30 V Enhancement, 6-Pin SC-70

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

小計（1 卷，共 3000 件）*

TWD23,400.00

(不含稅)

TWD24,570.00

訂單超過 $1,300.00 免費送貨

最後的 RS 庫存

最終 3,000 個，準備發貨

單位	每單位	每卷*
3000 - 12000	TWD7.80	TWD23,400.00
15000 +	TWD7.60	TWD22,800.00

* 參考價格

RS庫存編號:: 188-4859
製造零件編號:: SiA471DJ-T1-GE3
製造商:: Vishay

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Vishay
	Channel Type	Type P
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	30.3A
	Maximum Drain Source Voltage Vds	30V
	Package Type	SC-70
	Series	SiA471DJ
	Mount Type	Surface
	Pin Count	6
	Maximum Drain Source Resistance Rds	24mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	16 V
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	19.2W
	Typical Gate Charge Qg @ Vgs	18.5nC
	Forward Voltage Vf	-1.2V
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Length	2.15mm
	Width	2.15 mm
	Height	0.75mm
	Automotive Standard	No

	選取全部
	品牌 Vishay
	Channel Type Type P
	Product Type MOSFET
	Maximum Continuous Drain Current Id 30.3A
	Maximum Drain Source Voltage Vds 30V
	Package Type SC-70
	Series SiA471DJ
	Mount Type Surface
	Pin Count 6
	Maximum Drain Source Resistance Rds 24mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 16 V
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 19.2W
	Typical Gate Charge Qg @ Vgs 18.5nC
	Forward Voltage Vf -1.2V
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Length 2.15mm
	Width 2.15 mm
	Height 0.75mm
	Automotive Standard No

Datasheet SiA471DJ-T1-GE3

P-Channel 30 V (D-S) MOSFET.

TrenchFET® Gen IV p-channel power MOSFET

Thermally enhanced PowerPAK® SC-70 package

Very low RDS(on) x area minimizes power loss on limited PCB real estate

Vishay SiA471DJ Type P-Channel MOSFET, 30.3 A, 30 V Enhancement, 6-Pin SC-70

訂單超過 $1,300.00 免費送貨

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