Infineon OptiMOS™ Type N-Channel MOSFET, 237 A, 120 V, 8-Pin HSOF-8 IPT030N12N3GATMA1
- RS庫存編號:
- 236-3670
- 製造零件編號:
- IPT030N12N3GATMA1
- 製造商:
- Infineon
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可享批量折扣
小計（1 包，共 2 件）*
TWD309.00
(不含稅)
TWD324.44
(含稅)
添加 10 件 件可免費送貨
有庫存
- 加上 1,872 件從 2026年2月23日 起發貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 2 - 8 | TWD154.50 | TWD309.00 |
| 10 - 98 | TWD150.50 | TWD301.00 |
| 100 - 248 | TWD147.50 | TWD295.00 |
| 250 - 498 | TWD143.00 | TWD286.00 |
| 500 + | TWD139.00 | TWD278.00 |
* 參考價格
- RS庫存編號:
- 236-3670
- 製造零件編號:
- IPT030N12N3GATMA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 237A | |
| Maximum Drain Source Voltage Vds | 120V | |
| Series | OptiMOS™ | |
| Package Type | HSOF-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 3mΩ | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 375W | |
| Typical Gate Charge Qg @ Vgs | 158nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.1mm | |
| Standards/Approvals | No | |
| Height | 2.4mm | |
| Width | 10.58 mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 237A | ||
Maximum Drain Source Voltage Vds 120V | ||
Series OptiMOS™ | ||
Package Type HSOF-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 3mΩ | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 375W | ||
Typical Gate Charge Qg @ Vgs 158nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Length 10.1mm | ||
Standards/Approvals No | ||
Height 2.4mm | ||
Width 10.58 mm | ||
Automotive Standard No | ||
The Infineon OptiMOS power MOSFET is the Ideal fit for battery-powered equipment, with optimal balance between additional voltage breakdown margin and low on-state resistance. It is used in light electric vehicle, low voltage drives and battery powered tools.
High power density and improved thermal management
Less board space needed
High system efficiency and less paralleling required
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