Infineon OptiMOS™ Type N-Channel MOSFET, 237 A, 120 V, 8-Pin HSOF-8 IPT030N12N3GATMA1
- RS庫存編號:
- 236-3669
- 製造零件編號:
- IPT030N12N3GATMA1
- 製造商:
- Infineon
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可享批量折扣
查看批量定價選項小計（1 卷，共 2000 件）*
TWD222,800.00
(不含稅)
TWD233,940.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年9月07日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 2000 - 2000 | TWD111.40 | TWD222,800.00 |
| 4000 + | TWD108.10 | TWD216,200.00 |
* 參考價格
- RS庫存編號:
- 236-3669
- 製造零件編號:
- IPT030N12N3GATMA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 237A | |
| Maximum Drain Source Voltage Vds | 120V | |
| Package Type | HSOF-8 | |
| Series | OptiMOS™ | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 3mΩ | |
| Maximum Power Dissipation Pd | 375W | |
| Typical Gate Charge Qg @ Vgs | 158nC | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 2.4mm | |
| Length | 10.1mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 237A | ||
Maximum Drain Source Voltage Vds 120V | ||
Package Type HSOF-8 | ||
Series OptiMOS™ | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 3mΩ | ||
Maximum Power Dissipation Pd 375W | ||
Typical Gate Charge Qg @ Vgs 158nC | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Height 2.4mm | ||
Length 10.1mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon OptiMOS power MOSFET is the Ideal fit for battery-powered equipment, with optimal balance between additional voltage breakdown margin and low on-state resistance. It is used in light electric vehicle, low voltage drives and battery powered tools.
High power density and improved thermal management
Less board space needed
High system efficiency and less paralleling required
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