Infineon OptiMOS™ Type N-Channel MOSFET, 381 A, 40 V Enhancement, 8-Pin TDSON BSC0901NSATMA1
- RS庫存編號:
- 133-9798
- 製造零件編號:
- BSC0901NSATMA1
- 製造商:
- Infineon
可享批量折扣
小計（1 包，共 5 件）*
TWD118.00
(不含稅)
TWD123.90
(含稅)
添加 60 件 件可免費送貨
正在逐步停售
- 最終 55 個，準備發貨
單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 1245 | TWD23.60 | TWD118.00 |
| 1250 - 2495 | TWD23.00 | TWD115.00 |
| 2500 + | TWD22.80 | TWD114.00 |
* 參考價格
- RS庫存編號:
- 133-9798
- 製造零件編號:
- BSC0901NSATMA1
- 製造商:
- Infineon
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 381A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | OptiMOS™ | |
| Package Type | TDSON | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.7mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Forward Voltage Vf | 1V | |
| Maximum Power Dissipation Pd | 81W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Width | 6.35 mm | |
| Standards/Approvals | RoHS | |
| Height | 1.1mm | |
| Length | 5.35mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 381A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series OptiMOS™ | ||
Package Type TDSON | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.7mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Forward Voltage Vf 1V | ||
Maximum Power Dissipation Pd 81W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Width 6.35 mm | ||
Standards/Approvals RoHS | ||
Height 1.1mm | ||
Length 5.35mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
Infineon OptiMOS™3 Power MOSFETs, up to 40V
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
Fast switching MOSFET for SMPS
Optimized technology for DC/DC converters
Qualified according to JEDEC1) for target applications
N-channel, logic level
Excellent gate charge x R DS(on) product (FOM)
Very low on-resistance R DS(on)
Pb-free plating
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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