Infineon OptiMOS N-Channel MOSFET, 147 A, 25 V Enhancement, 8-Pin TDSON BSC015NE2LS5IATMA1

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RS庫存編號:
214-8971
製造零件編號:
BSC015NE2LS5IATMA1
製造商:
Infineon
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品牌

Infineon

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

147A

Maximum Drain Source Voltage Vds

25V

Series

OptiMOS

Package Type

TDSON

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

1.5mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

16V

Typical Gate Charge Qg @ Vgs

22nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

50W

Forward Voltage Vf

650mV

Maximum Operating Temperature

150°C

Standards/Approvals

No

Height

1.1mm

Length

5.49mm

Width

6.35mm

Automotive Standard

No

Infineon OptiMOS Series MOSFET, 50W Maximum Power Dissipation, 25V Maximum Drain Source Voltage - BSC015NE2LS5IATMA1


This MOSFET is a high-current N‑channel enhancement device designed for surface-mount power switching and load control in demanding thermal environments. It operates across a wide temperature span and is specified for significant continuous drain current and power handling, making it suitable for applications that require low conduction losses and Rapid gate-driven switching.

Features and Benefits:


• 1.5mΩ Rds(on) reduces conduction losses at high currents
• 147A continuous drain current supports heavy load currents
• 50W power dissipation enables sustained power handling
• 22nC typical gate charge allows efficient switching control
• 0.65V forward voltage minimises voltage drop under load
• 25V drain‑source rating suits low‑voltage power rails

Applications


• Suitable for high‑current DC-DC converters
• Ideal for synchronous rectification in power supplies
• Used for motor drive stages in power electronics
• Can be used for battery protection and distribution
• Appropriate for power switching in Compact SMD assemblies

What package and mounting style does it use?


It is supplied in an 8‑pin TDSON package intended for surface-mount assembly.

What voltage limits should be observed during circuit design?


The maximum drain‑source voltage is 25V and maximum gate‑source voltage is 16V.

How does it perform across temperature extremes?


It is specified to operate from −55°C up to 150°C for an extended thermal range.

What channel type and mode are implemented?


The device is an N‑channel enhancement‑mode MOSFET.

What physical footprint constraints are relevant for PCB layout?


The package measures approximately 5.49mm by 6.35mm with a height of 1.1mm.

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