Infineon OptiMOS Type N-Channel MOSFET, 100 A, 30 V Enhancement, 8-Pin TDSON BSC011N03LSATMA1
- RS庫存編號:
- 906-4280
- 製造零件編號:
- BSC011N03LSATMA1
- 製造商:
- Infineon
此圖片僅供參考,請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計(1 包,共 10 件)*
TWD542.00
(不含稅)
TWD569.10
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 7,740 件從 2026年8月10日 起發貨
**需要更多嗎?**輸入您需要的數量,然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 10 - 1240 | TWD54.20 | TWD542.00 |
| 1250 - 2490 | TWD52.80 | TWD528.00 |
| 2500 + | TWD52.10 | TWD521.00 |
* 參考價格
- RS庫存編號:
- 906-4280
- 製造零件編號:
- BSC011N03LSATMA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | OptiMOS | |
| Package Type | TDSON | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.4mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 96W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 36nC | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 1.1mm | |
| Length | 6.1mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series OptiMOS | ||
Package Type TDSON | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.4mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 96W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 36nC | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 1.1mm | ||
Length 6.1mm | ||
Automotive Standard No | ||
豁免
Infineon OptiMOS Series MOSFET, 30V Maximum Drain Source Voltage, 100A Maximum Continuous Drain Current - BSC011N03LSATMA1
This MOSFET is a power switching device designed for high-current, low-voltage applications in surface-mount assemblies. It operates across an extended ambient range and is intended for demanding thermal and electrical environments where efficient conduction and rapid switching are required.
Features and Benefits:
• Very low on-resistance 1.4mΩ reduces conduction losses
• High continuous drain capability 100A handles heavy loads
• Peak power dissipation 96W supports elevated power transfer
• Low forward voltage 1V improves conversion efficiency
• Typical gate charge 36nC enables fast gate transitions
• Rated gate tolerance 20V protects against gate overstress
• High continuous drain capability 100A handles heavy loads
• Peak power dissipation 96W supports elevated power transfer
• Low forward voltage 1V improves conversion efficiency
• Typical gate charge 36nC enables fast gate transitions
• Rated gate tolerance 20V protects against gate overstress
Applications
• Suitable for synchronous buck converters in servers
• Ideal for high-current motor-drive stages
• Used with power distribution modules in telecom racks
• Can be used for DC-DC power conversion in inverters
• Suitable for battery management and charging systems
• Ideal for high-current motor-drive stages
• Used with power distribution modules in telecom racks
• Can be used for DC-DC power conversion in inverters
• Suitable for battery management and charging systems
What thermal limits should designers allow for under sustained operation?
The device is specified to operate between -55°C and 150°C, so thermal management should ensure junction temperatures remain within this range under expected dissipation.
How does the gate charge affect drive requirements?
With a typical gate charge of 36nC, gate drivers must supply adequate charge quickly to achieve desired switching speeds while minimising transition losses.
What mounting considerations are necessary for reliable performance?
The component is supplied in an 8-pin TDSON surface-mount package measuring 6.1 x 5.35mm, so PCB land pattern and solder fillets should accommodate thermal conduction and mechanical stability.
Which electrical ratings dictate maximum switching voltage and current?
The device has a maximum drain-source voltage of 30V and a continuous drain current rating of 100A
switching topologies should remain within these electrical limits.
相關連結
- Infineon OptiMOS Type N-Channel MOSFET 30 V Enhancement, 8-Pin TDSON
- Infineon OptiMOS Type N-Channel MOSFET 40 V Enhancement, 8-Pin TDSON
- Infineon OptiMOS Type N-Channel MOSFET 100 V Enhancement, 8-Pin TDSON
- Infineon OptiMOS Type N-Channel MOSFET 60 V Enhancement, 8-Pin TDSON
- Infineon OptiMOS Type N-Channel MOSFET 30 V Enhancement, 8-Pin TDSON
- Infineon OptiMOS Type N-Channel MOSFET 25 V Enhancement, 8-Pin TDSON
- Infineon OptiMOS Type N-Channel MOSFET 30 V Enhancement, 8-Pin TDSON
- Infineon OptiMOS Type N-Channel MOSFET 25 V Enhancement, 8-Pin TDSON
