Infineon OptiMOS N-Channel MOSFET, 275 A, 40 V Enhancement, 8-Pin TDSON BSC010N04LSIATMA1
- RS庫存編號:
- 214-8969
- 製造零件編號:
- BSC010N04LSIATMA1
- 製造商:
- Infineon
此圖片僅供參考,請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計(1 卷,共 5000 件)*
TWD212,500.00
(不含稅)
TWD223,100.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2027年3月16日 發貨
**需要更多嗎?**輸入您需要的數量,然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 5000 - 20000 | TWD42.50 | TWD212,500.00 |
| 25000 + | TWD41.70 | TWD208,500.00 |
* 參考價格
- RS庫存編號:
- 214-8969
- 製造零件編號:
- BSC010N04LSIATMA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 275A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TDSON | |
| Series | OptiMOS | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.05mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 87nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 139W | |
| Forward Voltage Vf | 700mV | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | +175°C | |
| Width | 6.1mm | |
| Standards/Approvals | No | |
| Height | 1.2mm | |
| Length | 5.35mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 275A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TDSON | ||
Series OptiMOS | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.05mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 87nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 139W | ||
Forward Voltage Vf 700mV | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature +175°C | ||
Width 6.1mm | ||
Standards/Approvals No | ||
Height 1.2mm | ||
Length 5.35mm | ||
Automotive Standard No | ||
Infineon OptiMOS Series MOSFET, 40V Drain Source Voltage, 275A Continuous Drain Current - BSC010N04LSIATMA1
This MOSFET is a high‑current switching component designed for demanding power applications. It operates across a very wide ambient temperature range and is intended for surface‑mounted PCB implementations in Compact assemblies. The device features an enhancement‑mode N‑channel and supports gate‑drive voltages appropriate for robust switching control.
Features and Benefits:
• Low conduction resistance delivers efficient high‑current switching
• High continuous drain current enables substantial load driving
• 40 V drain‑source rating permits medium‑voltage system use
• 139 W dissipation supports elevated power handling
• 87 nC typical gate charge allows predictable switching energy
• 20 V gate‑source tolerance provides headroom for gate drive
• High continuous drain current enables substantial load driving
• 40 V drain‑source rating permits medium‑voltage system use
• 139 W dissipation supports elevated power handling
• 87 nC typical gate charge allows predictable switching energy
• 20 V gate‑source tolerance provides headroom for gate drive
Applications
• Suitable for high‑current DC motor drives
• Used for power distribution in battery systems
• Ideal for synchronous rectification in converters
• Can be used for server and telecoms power stages
• Used with inverter modules requiring robust switches
• Used for power distribution in battery systems
• Ideal for synchronous rectification in converters
• Can be used for server and telecoms power stages
• Used with inverter modules requiring robust switches
What temperature extremes can it withstand in operation?
It is rated for continuous use from −55 °C up to +175 °C.
What package and mounting style does it use for PCB assembly?
It is supplied in a TDSON package intended for surface mounting.
How many electrical connections are available for layout and routing?
The device uses an 8‑pin configuration for power and gate connections.
What gate drive behaviour should designers expect during switching?
Designers should plan for a typical gate charge of 87 nC when calculating drive losses and switching times.
What physical footprint should be allowed when placing the component?
The package measures 5.35 mm in length, 6.1 mm in width and 1.2 mm in height.
相關連結
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