製造零件編號

Infineon OptiMOS Type N-Channel MOSFET, 275 A, 40 V Enhancement, 8-Pin TDSON

RS庫存編號:: 214-8969
製造零件編號:: BSC010N04LSIATMA1
製造商:: Infineon

Infineon OptiMOS Type N-Channel MOSFET, 275 A, 40 V Enhancement, 8-Pin TDSON

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

小計（1 卷，共 5000 件）*

TWD193,500.00

(不含稅)

TWD203,200.00

訂單超過 $1,300.00 免費送貨

暫時缺貨

從 2026年6月15日發貨

**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。

單位	每單位	每卷*
5000 - 20000	TWD38.70	TWD193,500.00
25000 +	TWD37.90	TWD189,500.00

* 參考價格

RS庫存編號:: 214-8969
製造零件編號:: BSC010N04LSIATMA1
製造商:: Infineon

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	275A
	Maximum Drain Source Voltage Vds	40V
	Package Type	TDSON
	Series	OptiMOS
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	1.05mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	0.7V
	Typical Gate Charge Qg @ Vgs	87nC
	Maximum Power Dissipation Pd	139W
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Length	5.35mm
	Width	6.1 mm
	Height	1.2mm
	Automotive Standard	No

	選取全部
	品牌 Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 275A
	Maximum Drain Source Voltage Vds 40V
	Package Type TDSON
	Series OptiMOS
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 1.05mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 0.7V
	Typical Gate Charge Qg @ Vgs 87nC
	Maximum Power Dissipation Pd 139W
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Length 5.35mm
	Width 6.1 mm
	Height 1.2mm
	Automotive Standard No

Datasheet - BSC010N04LSIATMA1

The Infineon New 40V and 60V product families, feature not only the industry’s lowest R DS(on) but also a perfect switching behaviour for fast switching applications. 15% lower R DS(on) and 31% lower figure of merit (R DS(on) x Q g) compared to alternative devices has been realized by advanced thin wafer technology. OptiMOS products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements.

Monolithic integrated Schottky-like diode

Optimized for synchronous rectification

100% avalanche tested

Infineon OptiMOS Type N-Channel MOSFET, 275 A, 40 V Enhancement, 8-Pin TDSON

訂單超過 $1,300.00 免費送貨

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