Infineon OptiMOS Type N-Channel MOSFET, 40 A, 30 V Enhancement, 8-Pin TDSON BSZ065N03LSATMA1
- RS庫存編號:
- 906-4331
- 製造零件編號:
- BSZ065N03LSATMA1
- 製造商:
- Infineon
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可享批量折扣
小計（1 包，共 20 件）*
TWD318.00
(不含稅)
TWD334.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 14,980 件從 2026年1月12日 起發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 20 - 1240 | TWD15.90 | TWD318.00 |
| 1260 - 2480 | TWD15.50 | TWD310.00 |
| 2500 + | TWD15.20 | TWD304.00 |
* 參考價格
- RS庫存編號:
- 906-4331
- 製造零件編號:
- BSZ065N03LSATMA1
- 製造商:
- Infineon
規格
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產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 40A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | OptiMOS | |
| Package Type | TDSON | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 8.6mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 26W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1V | |
| Typical Gate Charge Qg @ Vgs | 5.2nC | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.1mm | |
| Length | 3.4mm | |
| Width | 3.4 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 40A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series OptiMOS | ||
Package Type TDSON | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 8.6mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 26W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1V | ||
Typical Gate Charge Qg @ Vgs 5.2nC | ||
Maximum Operating Temperature 150°C | ||
Height 1.1mm | ||
Length 3.4mm | ||
Width 3.4 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
豁免
Infineon OptiMOS™ Power MOSFET Family
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
N-channel - Enhancement mode
Automotive AEC Q101 qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green package (lead free)
Ultra low Rds(on)
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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