Infineon OptiMOS™ Type N-Channel MOSFET, 433 A, 30 V, 8-Pin TDSON BSC005N03LS5IATMA1
- RS庫存編號:
- 236-3644
- 製造零件編號:
- BSC005N03LS5IATMA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 卷，共 5000 件）*
TWD153,500.00
(不含稅)
TWD161,200.00
(含稅)
添加 5000 件 件可免費送貨
暫時缺貨
- 從 2026年6月29日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 5000 - 5000 | TWD30.70 | TWD153,500.00 |
| 10000 + | TWD29.80 | TWD149,000.00 |
* 參考價格
- RS庫存編號:
- 236-3644
- 製造零件編號:
- BSC005N03LS5IATMA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 433A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | OptiMOS™ | |
| Package Type | TDSON | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 5.5mΩ | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 188W | |
| Typical Gate Charge Qg @ Vgs | 51nC | |
| Forward Voltage Vf | 0.7V | |
| Maximum Operating Temperature | 175°C | |
| Width | 6.35 mm | |
| Standards/Approvals | No | |
| Height | 1.1mm | |
| Length | 5.49mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 433A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series OptiMOS™ | ||
Package Type TDSON | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 5.5mΩ | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 188W | ||
Typical Gate Charge Qg @ Vgs 51nC | ||
Forward Voltage Vf 0.7V | ||
Maximum Operating Temperature 175°C | ||
Width 6.35 mm | ||
Standards/Approvals No | ||
Height 1.1mm | ||
Length 5.49mm | ||
Automotive Standard No | ||
The Infineon OptiMOS power MOSFET offers Benchmark solutions by enabling highest power density and energy efficiency, both in stand by and full operation. It offers drain source on-state resistance of 0.55 m Ohm.
Highest efficiency
Highest power density in SuperSO8 package
Reduction of overall system costs
RoHS compliant
Halogen free
相關連結
- Infineon OptiMOS™ Type N-Channel MOSFET 30 V, 8-Pin TDSON BSC005N03LS5IATMA1
- Infineon OptiMOS™ Type N-Channel MOSFET 30 V, 8-Pin TDSON BSC005N03LS5ATMA1
- Infineon OptiMOS™ Type N-Channel MOSFET 25 V, 8-Pin TDSON BSC004NE2LS5ATMA1
- Infineon OptiMOS™ Type N-Channel MOSFET 40 V Enhancement, 8-Pin TDSON BSC0901NSATMA1
- Infineon OptiMOS Type N-Channel MOSFET 25 V TDSON
- Infineon OptiMOS Type N-Channel MOSFET 60 V TDSON
- Infineon OptiMOS Type N-Channel MOSFET 25 V TDSON BSC010NE2LSIATMA1
- Infineon OptiMOS Type N-Channel MOSFET 60 V TDSON BSC014N06NSATMA1