Infineon OptiMOS 5 Type N-Channel MOSFET, 300 A, 100 V Enhancement, 8-Pin HSOF
- RS庫存編號:
- 214-4346
- 製造零件編號:
- IAUT300N10S5N015ATMA1
- 製造商:
- Infineon
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可享批量折扣
查看批量定價選項小計（1 卷，共 2000 件）*
TWD181,000.00
(不含稅)
TWD190,040.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年12月21日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 2000 - 2000 | TWD90.50 | TWD181,000.00 |
| 4000 + | TWD87.80 | TWD175,600.00 |
* 參考價格
- RS庫存編號:
- 214-4346
- 製造零件編號:
- IAUT300N10S5N015ATMA1
- 製造商:
- Infineon
規格
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法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 300A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | HSOF | |
| Series | OptiMOS 5 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.5mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 375W | |
| Typical Gate Charge Qg @ Vgs | 166nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 300A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type HSOF | ||
Series OptiMOS 5 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.5mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 375W | ||
Typical Gate Charge Qg @ Vgs 166nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Infineon OptiMOS 5 Series MOSFET, 100V Maximum Drain Source Voltage, 300A Maximum Continuous Drain Current - IAUT300N10S5N015ATMA1
This MOSFET is a high-power N‑channel enhancement device designed for demanding switching and power conversion roles. It operates across a broad temperature span suitable for harsh conditions and is packaged for surface mounting in an industry-standard HSOF footprint, offering low forward drop for efficient conduction in high-current circuits.
Features and Benefits:
• 100V drain capability enables higher-voltage switching
• 1.5mΩ low Rds(on) reduces conduction losses during high currents
• 300A continuous current supports heavy-load applications
• 375W power dissipation allows sustained thermal loading
• 166nC gate charge balances switching speed and drive requirements
• 1.3V forward voltage limits voltage drop under load
• 1.5mΩ low Rds(on) reduces conduction losses during high currents
• 300A continuous current supports heavy-load applications
• 375W power dissipation allows sustained thermal loading
• 166nC gate charge balances switching speed and drive requirements
• 1.3V forward voltage limits voltage drop under load
Applications
• Suitable for high-current power converters and inverters
• Ideal for traction and motor-drive stages in power electronics
• Used for high-performance DC-DC converters in industrial systems
• Can be used for solid-state power distribution modules
• Suitable for fast switching stages in server power supplies
• Ideal for traction and motor-drive stages in power electronics
• Used for high-performance DC-DC converters in industrial systems
• Can be used for solid-state power distribution modules
• Suitable for fast switching stages in server power supplies
What gate-drive strength is required for efficient switching?
Expect gate drivers capable of sourcing and sinking sufficient current to charge 166nC within your targeted switching interval
slower drive increases switching losses.
How does the device handle elevated junction temperatures?
It is rated to operate from -55°C up to 175°C, permitting use in high-temperature environments when appropriate thermal management is applied.
What mounting considerations are important for thermal performance?
Surface-mount HSOF requires a well-designed PCB thermal land and heat-sinking strategy to dissipate up to 375W of power under heavy duty.
How does channel configuration affect circuit design?
As an N‑channel enhancement device, it is suited to low-side switching or synchronous rectification arrangements where the gate reference is near the source potential.
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