製造零件編號

Infineon OptiMOS 3 Type N-Channel MOSFET, 96 A, 200 V Enhancement, 8-Pin HSOF IPT111N20NFDATMA1

RS庫存編號:: 214-4424
製造零件編號:: IPT111N20NFDATMA1
製造商:: Infineon

Infineon OptiMOS 3 Type N-Channel MOSFET, 96 A, 200 V Enhancement, 8-Pin HSOF IPT111N20NFDATMA1

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RS庫存編號:: 214-4424
製造零件編號:: IPT111N20NFDATMA1
製造商:: Infineon

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產品詳細資訊

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選取全部	屬性	值
	品牌	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	96A
	Maximum Drain Source Voltage Vds	200V
	Package Type	HSOF
	Series	OptiMOS 3
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	11.1mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.2V
	Typical Gate Charge Qg @ Vgs	65nC
	Maximum Power Dissipation Pd	375W
	Maximum Operating Temperature	175°C
	Standards/Approvals	No
	Height	2.4mm
	Length	10.1mm
	Automotive Standard	No

	選取全部
	品牌 Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 96A
	Maximum Drain Source Voltage Vds 200V
	Package Type HSOF
	Series OptiMOS 3
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 11.1mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.2V
	Typical Gate Charge Qg @ Vgs 65nC
	Maximum Power Dissipation Pd 375W
	Maximum Operating Temperature 175°C
	Standards/Approvals No
	Height 2.4mm
	Length 10.1mm
	Automotive Standard No

Datasheet - IPT111N20NFDATMA1

This Infineon OptiMOS 3 MOSFET is perfect solution for high power applications where highest efficiency, outstanding EMI behaviour as well as best thermal behaviour and space reduction are required.

It is RoHS compliant

Infineon OptiMOS 3 Type N-Channel MOSFET, 96 A, 200 V Enhancement, 8-Pin HSOF IPT111N20NFDATMA1

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