Infineon OptiMOS 3 Type N-Channel MOSFET, 96 A, 200 V Enhancement, 8-Pin HSOF IPT111N20NFDATMA1
- RS庫存編號:
- 214-4424
- 製造零件編號:
- IPT111N20NFDATMA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 2 件）*
TWD464.00
(不含稅)
TWD487.20
(含稅)
庫存資訊目前無法存取 - 請稍後再回來查看
單位 | 每單位 | 每包* |
|---|---|---|
| 2 - 498 | TWD232.00 | TWD464.00 |
| 500 - 998 | TWD225.50 | TWD451.00 |
| 1000 + | TWD223.00 | TWD446.00 |
* 參考價格
- RS庫存編號:
- 214-4424
- 製造零件編號:
- IPT111N20NFDATMA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 96A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Package Type | HSOF | |
| Series | OptiMOS 3 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 11.1mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 375W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 65nC | |
| Maximum Operating Temperature | 175°C | |
| Height | 2.4mm | |
| Length | 10.1mm | |
| Standards/Approvals | No | |
| Width | 10.58 mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 96A | ||
Maximum Drain Source Voltage Vds 200V | ||
Package Type HSOF | ||
Series OptiMOS 3 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 11.1mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 375W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 65nC | ||
Maximum Operating Temperature 175°C | ||
Height 2.4mm | ||
Length 10.1mm | ||
Standards/Approvals No | ||
Width 10.58 mm | ||
Automotive Standard No | ||
This Infineon OptiMOS 3 MOSFET is perfect solution for high power applications where highest efficiency, outstanding EMI behaviour as well as best thermal behaviour and space reduction are required.
It is RoHS compliant
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