製造零件編號

Toshiba Type N-Channel MOSFET, 2 A, 40 V, 3-Pin SOT-23

RS庫存編號:: 236-3576
製造零件編號:: SSM3K339R,LF(T
製造商:: Toshiba

Toshiba Type N-Channel MOSFET, 2 A, 40 V, 3-Pin SOT-23

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

小計（1 卷，共 3000 件）*

TWD8,700.00

(不含稅)

TWD9,120.00

訂單超過 $1,300.00 免費送貨

有庫存

15,000 件準備從其他地點送貨

**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。

單位	每單位	每卷*
3000 - 12000	TWD2.90	TWD8,700.00
15000 +	TWD2.70	TWD8,100.00

* 參考價格

RS庫存編號:: 236-3576
製造零件編號:: SSM3K339R,LF(T
製造商:: Toshiba

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Toshiba
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	2A
	Maximum Drain Source Voltage Vds	40V
	Package Type	SOT-23
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	220mΩ
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	-0.85V
	Maximum Power Dissipation Pd	2W
	Maximum Gate Source Voltage Vgs	12 V
	Typical Gate Charge Qg @ Vgs	1.1nC
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Width	2.9 mm
	Length	2.4mm
	Height	0.8mm
	Automotive Standard	No

	選取全部
	品牌 Toshiba
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 2A
	Maximum Drain Source Voltage Vds 40V
	Package Type SOT-23
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 220mΩ
	Minimum Operating Temperature -55°C
	Forward Voltage Vf -0.85V
	Maximum Power Dissipation Pd 2W
	Maximum Gate Source Voltage Vgs 12 V
	Typical Gate Charge Qg @ Vgs 1.1nC
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Width 2.9 mm
	Length 2.4mm
	Height 0.8mm
	Automotive Standard No

Datasheet - SSM3K339R,LF(T

The Toshiba field effect transistor made up of the silicon material and having N channel MOS type. It is mainly used in power management switching applications.

Storage temperature range −55 to 150 °C

Toshiba Type N-Channel MOSFET, 2 A, 40 V, 3-Pin SOT-23

訂單超過 $1,300.00 免費送貨

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