Toshiba Type P-Channel MOSFET, 3.5 A, 60 V, 3-Pin SOT-23 SSM3J351R,LF(T
- RS庫存編號:
- 236-3571
- 製造零件編號:
- SSM3J351R,LF(T
- 製造商:
- Toshiba
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TWD436.00
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單位 | 每單位 | 每包* |
|---|---|---|
| 50 - 50 | TWD8.30 | TWD415.00 |
| 100 - 200 | TWD8.10 | TWD405.00 |
| 250 - 450 | TWD7.90 | TWD395.00 |
| 500 - 950 | TWD7.70 | TWD385.00 |
| 1000 + | TWD7.50 | TWD375.00 |
* 參考價格
- RS庫存編號:
- 236-3571
- 製造零件編號:
- SSM3J351R,LF(T
- 製造商:
- Toshiba
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Toshiba | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 3.5A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 129mΩ | |
| Forward Voltage Vf | 850mV | |
| Typical Gate Charge Qg @ Vgs | 15.1nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 2W | |
| Maximum Gate Source Voltage Vgs | -20V | |
| Maximum Operating Temperature | 150°C | |
| Length | 2.4mm | |
| Width | 2.9mm | |
| Height | 800μm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Toshiba | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 3.5A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 129mΩ | ||
Forward Voltage Vf 850mV | ||
Typical Gate Charge Qg @ Vgs 15.1nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 2W | ||
Maximum Gate Source Voltage Vgs -20V | ||
Maximum Operating Temperature 150°C | ||
Length 2.4mm | ||
Width 2.9mm | ||
Height 800μm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
The Toshiba field effect transistor MADE up of the silicon material and having P channel MOS type. It is mainly used in power management switching applications.
Storage temperature range −55 to 150 °C
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