Toshiba Type P-Channel MOSFET, 2 A, 60 V, 3-Pin SOT-23 SSM3J356R,LF(T
- RS庫存編號:
- 236-3573
- 製造零件編號:
- SSM3J356R,LF(T
- 製造商:
- Toshiba
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 50 件）*
TWD285.00
(不含稅)
TWD299.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 150 件準備從其他地點送貨
- 加上 400 件從 2026年1月14日 起發貨
- 加上 2,350 件從 2026年1月16日 起發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 50 - 50 | TWD5.70 | TWD285.00 |
| 100 - 200 | TWD5.60 | TWD280.00 |
| 250 - 450 | TWD5.50 | TWD275.00 |
| 500 - 950 | TWD5.30 | TWD265.00 |
| 1000 + | TWD5.20 | TWD260.00 |
* 參考價格
- RS庫存編號:
- 236-3573
- 製造零件編號:
- SSM3J356R,LF(T
- 製造商:
- Toshiba
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Toshiba | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 2A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 400mΩ | |
| Typical Gate Charge Qg @ Vgs | 8.3nC | |
| Maximum Power Dissipation Pd | 2W | |
| Maximum Gate Source Voltage Vgs | -20 V | |
| Forward Voltage Vf | 0.9V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 2.4mm | |
| Height | 0.8mm | |
| Width | 2.9 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Toshiba | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 2A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 400mΩ | ||
Typical Gate Charge Qg @ Vgs 8.3nC | ||
Maximum Power Dissipation Pd 2W | ||
Maximum Gate Source Voltage Vgs -20 V | ||
Forward Voltage Vf 0.9V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 2.4mm | ||
Height 0.8mm | ||
Width 2.9 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Toshiba field effect transistor made up of the silicon material and having P channel MOS type. It is mainly used in power management switching applications.
Storage temperature range −55 to 150 °C
相關連結
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