Toshiba Type N-Channel MOSFET, 2 A, 40 V Enhancement, 3-Pin SOT-23

此圖片僅供參考，請參閲產品詳細資訊及規格

查看所有MOSFETs
可享批量折扣

小計（1 卷，共 3000 件）*

TWD9,000.00

(不含稅)

TWD9,450.00

(含稅)

Add to Basket
選擇或輸入數量
有庫存
  • 15,000 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位
每單位
每卷*
3000 - 3000TWD3.00TWD9,000.00
6000 - 9000TWD2.90TWD8,700.00
12000 +TWD2.80TWD8,400.00

* 參考價格

RS庫存編號:
171-2402
製造零件編號:
SSM3K339R
製造商:
Toshiba
透過選取一個或多個屬性來查找類似產品。
選取全部

品牌

Toshiba

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

2A

Maximum Drain Source Voltage Vds

40V

Package Type

SOT-23

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

390mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Typical Gate Charge Qg @ Vgs

1.1nC

Maximum Gate Source Voltage Vgs

12 V

Maximum Power Dissipation Pd

2W

Maximum Operating Temperature

150°C

Standards/Approvals

No

Height

0.7mm

Length

2.9mm

Width

1.8 mm

Automotive Standard

No

COO (Country of Origin):
TH
Power Management Switches

DC-DC Converters

1.8-V gate drive voltage.

Low drain-source on-resistance

RDS(ON) = 145 mΩ (typ.) (@VGS = 8.0 V, ID = 1.0 A)

RDS(ON) = 155 mΩ (typ.) (@VGS = 4.5 V, ID = 1.0 A)

RDS(ON) = 160 mΩ (typ.) (@VGS = 3.6 V, ID = 1.0 A)

RDS(ON) = 180 mΩ (typ.) (@VGS = 2.5 V, ID = 0.5 A)

RDS(ON) = 220 mΩ (typ.) (@VGS = 1.8 V, ID = 0.2 A)

相關連結