Toshiba Type N-Channel MOSFET, 400 mA, 60 V Enhancement, 3-Pin SOT-23
- RS庫存編號:
- 171-2411
- 製造零件編號:
- T2N7002BK
- 製造商:
- Toshiba
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 卷，共 3000 件）*
TWD4,200.00
(不含稅)
TWD4,410.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 6,000 件從 2026年1月08日 起發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 3000 - 3000 | TWD1.40 | TWD4,200.00 |
| 6000 - 9000 | TWD1.30 | TWD3,900.00 |
| 12000 + | TWD1.30 | TWD3,900.00 |
* 參考價格
- RS庫存編號:
- 171-2411
- 製造零件編號:
- T2N7002BK
- 製造商:
- Toshiba
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Toshiba | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 400mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.75Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | -0.79V | |
| Typical Gate Charge Qg @ Vgs | 0.39nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 1W | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.9mm | |
| Standards/Approvals | No | |
| Width | 1.3 mm | |
| Length | 2.9mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Toshiba | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 400mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.75Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf -0.79V | ||
Typical Gate Charge Qg @ Vgs 0.39nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 1W | ||
Maximum Operating Temperature 150°C | ||
Height 0.9mm | ||
Standards/Approvals No | ||
Width 1.3 mm | ||
Length 2.9mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- TH
High-Speed Switching
ESD(HBM) level 2 kV
Low drain-source on-resistance
RDS(ON) = 1.05 Ω (typ.) (@VGS = 10 V)
RDS(ON) = 1.15 Ω (typ.) (@VGS = 5.0 V)
RDS(ON) = 1.2 Ω (typ.) (@VGS = 4.5 V)
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