Toshiba Dual N-Channel MOSFET, 400 mA, 60 V, 3-Pin SOT-23 T2N7002BK
- RS庫存編號:
- 171-2528
- 製造零件編號:
- T2N7002BK
- 製造商:
- Toshiba
可享批量折扣
小計(1 包,共 100 件)*
TWD230.00
(不含稅)
TWD242.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 1,600 件準備從其他地點送貨
- 加上 6,300 件從 2025年11月25日 起發貨
**需要更多嗎?**輸入您需要的數量,然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 100 - 700 | TWD2.30 | TWD230.00 |
| 800 - 1400 | TWD2.20 | TWD220.00 |
| 1500 + | TWD2.20 | TWD220.00 |
* 參考價格
- RS庫存編號:
- 171-2528
- 製造零件編號:
- T2N7002BK
- 製造商:
- Toshiba
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Toshiba | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 400 mA | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | SOT-23 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 1.75 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.1V | |
| Minimum Gate Threshold Voltage | 1.1V | |
| Maximum Power Dissipation | 1 W | |
| Maximum Gate Source Voltage | ±20 V | |
| Number of Elements per Chip | 2 | |
| Width | 1.3mm | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 0.39 nC @ 4.5 V | |
| Length | 2.9mm | |
| Height | 0.9mm | |
| Forward Diode Voltage | 1.1V | |
| 選取全部 | ||
|---|---|---|
品牌 Toshiba | ||
Channel Type N | ||
Maximum Continuous Drain Current 400 mA | ||
Maximum Drain Source Voltage 60 V | ||
Package Type SOT-23 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 1.75 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.1V | ||
Minimum Gate Threshold Voltage 1.1V | ||
Maximum Power Dissipation 1 W | ||
Maximum Gate Source Voltage ±20 V | ||
Number of Elements per Chip 2 | ||
Width 1.3mm | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 0.39 nC @ 4.5 V | ||
Length 2.9mm | ||
Height 0.9mm | ||
Forward Diode Voltage 1.1V | ||
- COO (Country of Origin):
- TH
High-Speed Switching
ESD(HBM) level 2 kV
Low drain-source on-resistance
RDS(ON) = 1.05 Ω (typ.) (@VGS = 10 V)
RDS(ON) = 1.15 Ω (typ.) (@VGS = 5.0 V)
RDS(ON) = 1.2 Ω (typ.) (@VGS = 4.5 V)
Low drain-source on-resistance
RDS(ON) = 1.05 Ω (typ.) (@VGS = 10 V)
RDS(ON) = 1.15 Ω (typ.) (@VGS = 5.0 V)
RDS(ON) = 1.2 Ω (typ.) (@VGS = 4.5 V)
For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.
相關連結
- Toshiba Dual N-Channel MOSFET 60 V, 3-Pin SOT-23 T2N7002BK
- Toshiba Dual N-Channel MOSFET 60 V, 6-Pin SOT-363 SSM6N7002KFU
- Toshiba Silicon N-Channel MOSFET 60 VLM(T
- ROHM N-Channel MOSFET 60 V, 3-Pin SOT-23 BSS138BKAHZGT116
- onsemi Dual N/P-Channel MOSFET 510 mA 6-Pin SOT-23 NDC7001C
- onsemi Dual N/P-Channel-Channel MOSFET 510 mA 6-Pin SOT-23 NDC7001C
- onsemi PowerTrench Dual P-Channel MOSFET 60 V, 6-Pin SOT-23 NDC7003P
- Toshiba Dual N-Channel MOSFET 20 V, 6-Pin SOT-563 SSM6N35FE
