onsemi NTH Type N-Channel MOSFET, 68 A, 1200 V N, 4-Pin TO-247 NTH4L022N120M3S

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包裝方式:
RS庫存編號:
233-6854
製造零件編號:
NTH4L022N120M3S
製造商:
onsemi
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品牌

onsemi

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

68A

Maximum Drain Source Voltage Vds

1200V

Series

NTH

Package Type

TO-247

Mount Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance Rds

30mΩ

Channel Mode

N

Forward Voltage Vf

1.2V

Typical Gate Charge Qg @ Vgs

151nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

325W

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Length

15.8mm

Height

41.36mm

Automotive Standard

No

Silicon Carbide (SiC) MOSFET – EliteSiC, 22 mohm, 1200 V, M3S, TO-247-4L


The ON Semiconductor NTH4L022N120M3S is SiC power, single N-Channel MOSFET. It is available in a TO247-4L package. With Drain to Source voltage of 1200 V and continuous drain current of 68 A, the NTH4L022N120M3S is used in applications like Solar Inverters, Electric Vehicle Charging Stations, UPS (Uninterruptible Power Supplies), Energy Storage Systems, SMPS (Switch Mode Power Supplies).

The typical RDS(on) for this device is 22 mꭥ with VGS of 18 V

The device offers low switching losses

It is 100% avalanche tested

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