onsemi NTH Type N-Channel MOSFET, 68 A, 1200 V N, 4-Pin TO-247
- RS庫存編號:
- 233-6853
- 製造零件編號:
- NTH4L022N120M3S
- 製造商:
- onsemi
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 管，共 450 件）*
TWD197,910.00
(不含稅)
TWD207,805.50
(含稅)
庫存資訊目前無法存取 - 請稍後再回來查看
單位 | 每單位 | 每管* |
|---|---|---|
| 450 - 450 | TWD439.80 | TWD197,910.00 |
| 900 + | TWD431.00 | TWD193,950.00 |
* 參考價格
- RS庫存編號:
- 233-6853
- 製造零件編號:
- NTH4L022N120M3S
- 製造商:
- onsemi
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 68A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Series | NTH | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 30mΩ | |
| Channel Mode | N | |
| Maximum Power Dissipation Pd | 325W | |
| Typical Gate Charge Qg @ Vgs | 151nC | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 41.36mm | |
| Standards/Approvals | RoHS | |
| Length | 15.8mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 68A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Series NTH | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 30mΩ | ||
Channel Mode N | ||
Maximum Power Dissipation Pd 325W | ||
Typical Gate Charge Qg @ Vgs 151nC | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Height 41.36mm | ||
Standards/Approvals RoHS | ||
Length 15.8mm | ||
Automotive Standard No | ||
Silicon Carbide (SiC) MOSFET – EliteSiC, 22 mohm, 1200 V, M3S, TO-247-4L
The ON Semiconductor NTH4L022N120M3S is SiC power, single N-Channel MOSFET. It is available in a TO247-4L package. With Drain to Source voltage of 1200 V and continuous drain current of 68 A, the NTH4L022N120M3S is used in applications like Solar Inverters, Electric Vehicle Charging Stations, UPS (Uninterruptible Power Supplies), Energy Storage Systems, SMPS (Switch Mode Power Supplies).
The typical RDS(on) for this device is 22 mꭥ with VGS of 18 V
The device offers low switching losses
It is 100% avalanche tested
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