製造零件編號

Infineon ISC Type N-Channel MOSFET, 238 A, 40 V Enhancement, 8-Pin TDSON

RS庫存編號:: 233-4394
製造零件編號:: ISC012N04LM6ATMA1
製造商:: Infineon

Infineon ISC Type N-Channel MOSFET, 238 A, 40 V Enhancement, 8-Pin TDSON

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

小計（1 卷，共 5000 件）*

TWD121,000.00

(不含稅)

TWD127,050.00

訂單超過 $1,300.00 免費送貨

暫時缺貨

從 2026年8月13日發貨

**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。

單位	每單位	每卷*
5000 - 20000	TWD24.20	TWD121,000.00
25000 +	TWD23.00	TWD115,000.00

* 參考價格

RS庫存編號:: 233-4394
製造零件編號:: ISC012N04LM6ATMA1
製造商:: Infineon

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	238A
	Maximum Drain Source Voltage Vds	40V
	Series	ISC
	Package Type	TDSON
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	1.2mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	125W
	Typical Gate Charge Qg @ Vgs	64nC
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Height	5.35mm
	Width	1.2 mm
	Standards/Approvals	No
	Length	6.1mm
	Automotive Standard	No

	選取全部
	品牌 Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 238A
	Maximum Drain Source Voltage Vds 40V
	Series ISC
	Package Type TDSON
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 1.2mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 125W
	Typical Gate Charge Qg @ Vgs 64nC
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Height 5.35mm
	Width 1.2 mm
	Standards/Approvals No
	Length 6.1mm
	Automotive Standard No

Datasheet - ISC012N04LM6ATMA1

The Infineon OptiMOS 6 power MOSFET 40 V family has very low on-resistance RDS(on) and it optimized for synchronous application.

Higher operating temperature rating to 175°C

Superior thermal performance

Infineon ISC Type N-Channel MOSFET, 238 A, 40 V Enhancement, 8-Pin TDSON

訂單超過 $1,300.00 免費送貨

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