Infineon ISC Type N-Channel MOSFET, 288 A, 60 V Enhancement, 8-Pin TDSON ISC011N06LM5ATMA1
- RS庫存編號:
- 233-4393
- 製造零件編號:
- ISC011N06LM5ATMA1
- 製造商:
- Infineon
此圖片僅供參考,請參閲產品詳細資訊及規格
可享批量折扣
小計(1 包,共 5 件)*
TWD466.00
(不含稅)
TWD489.30
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 4,930 件準備從其他地點送貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 5 | TWD93.20 | TWD466.00 |
| 10 - 95 | TWD91.20 | TWD456.00 |
| 100 - 245 | TWD89.40 | TWD447.00 |
| 250 - 495 | TWD87.80 | TWD439.00 |
| 500 + | TWD86.00 | TWD430.00 |
* 參考價格
- RS庫存編號:
- 233-4393
- 製造零件編號:
- ISC011N06LM5ATMA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 288A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | ISC | |
| Package Type | TDSON | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.15mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 1.89kW | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 170nC | |
| Maximum Operating Temperature | 175°C | |
| Height | 5.35mm | |
| Width | 1.2 mm | |
| Length | 6.1mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 288A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series ISC | ||
Package Type TDSON | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.15mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 1.89kW | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 170nC | ||
Maximum Operating Temperature 175°C | ||
Height 5.35mm | ||
Width 1.2 mm | ||
Length 6.1mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon MOSFET in the SuperSO8 package extends the OptiMOS 5 and 3 product portfolio and enables higher power density in addition to improved robustness, responding to the need for lower system cost and increased performance. It has low reverse recovery charge (Qrr) which improves the system reliability by providing a significant reduction of voltage overshoot, which minimizes the need for snubber circuits, resulting in less engineering cost and effort.
Higher operating temperature rating to 175°C
Superior thermal performance
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