STMicroelectronics SCTW70N Type N-Channel MOSFET, 91 A, 1200 V Enhancement, 3-Pin Hip-247 SCTW70N120G2V
- RS庫存編號:
- 233-3024
- 製造零件編號:
- SCTW70N120G2V
- 製造商:
- STMicroelectronics
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可享批量折扣
小計（1 件）*
TWD1,435.00
(不含稅)
TWD1,506.75
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年9月24日 發貨
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|---|---|
| 1 - 4 | TWD1,435.00 |
| 5 - 9 | TWD1,399.00 |
| 10 + | TWD1,371.00 |
* 參考價格
- RS庫存編號:
- 233-3024
- 製造零件編號:
- SCTW70N120G2V
- 製造商:
- STMicroelectronics
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 91A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Series | SCTW70N | |
| Package Type | Hip-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 21mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 547W | |
| Forward Voltage Vf | 2.7V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Typical Gate Charge Qg @ Vgs | 28nC | |
| Maximum Operating Temperature | 200°C | |
| Width | 5.15 mm | |
| Length | 15.75mm | |
| Height | 20.15mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 91A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Series SCTW70N | ||
Package Type Hip-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 21mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 547W | ||
Forward Voltage Vf 2.7V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Typical Gate Charge Qg @ Vgs 28nC | ||
Maximum Operating Temperature 200°C | ||
Width 5.15 mm | ||
Length 15.75mm | ||
Height 20.15mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The STMicroelectronics silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the Sic material allow designers to use an industry-standard outline with significantly improved thermal capability. These features render the device perfectly suitable for high-efficiency and high power density applications.
Very high operating junction temperature capability (TJ = 200 °C)
Very fast and robust intrinsic body diode
Extremely low gate charge and input capacitances
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