STMicroelectronics SCTWA70N120G2V-4 Type N-Channel MOSFET, 91 A, 1200 V Enhancement, 4-Pin Hip-247
- RS庫存編號:
- 233-0474
- 製造零件編號:
- SCTWA70N120G2V-4
- 製造商:
- STMicroelectronics
可享批量折扣
小計（1 管，共 30 件）*
TWD46,257.00
(不含稅)
TWD48,570.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 360 件從 2026年2月23日 起裝運發貨
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單位 | 每單位 | 每管* |
|---|---|---|
| 30 - 120 | TWD1,541.90 | TWD46,257.00 |
| 150 + | TWD1,495.60 | TWD44,868.00 |
* 參考價格
- RS庫存編號:
- 233-0474
- 製造零件編號:
- SCTWA70N120G2V-4
- 製造商:
- STMicroelectronics
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 91A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | Hip-247 | |
| Series | SCTWA70N120G2V-4 | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 30mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 2.7V | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Maximum Power Dissipation Pd | 547W | |
| Typical Gate Charge Qg @ Vgs | 150nC | |
| Maximum Operating Temperature | 200°C | |
| Height | 5mm | |
| Length | 34.8mm | |
| Width | 15.6 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 91A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type Hip-247 | ||
Series SCTWA70N120G2V-4 | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 30mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 2.7V | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Maximum Power Dissipation Pd 547W | ||
Typical Gate Charge Qg @ Vgs 150nC | ||
Maximum Operating Temperature 200°C | ||
Height 5mm | ||
Length 34.8mm | ||
Width 15.6 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The STMicroelectronics silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.
Very fast and robust intrinsic body diode
Extremely low gate charge and input capacitance
Very high operating junction temperature capability (TJ = 200 °C)
Source sensing pin for increased efficiency
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