STMicroelectronics SCTWA40N12G24AG Type N-Channel MOSFET, 33 A, 1200 V Enhancement, 4-Pin Hip-247
- RS庫存編號:
- 214-973
- 製造零件編號:
- SCTWA40N12G24AG
- 製造商:
- STMicroelectronics
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小計（1 件）*
TWD611.00
(不含稅)
TWD641.55
(含稅)
訂單超過 $1,300.00 免費送貨
最後的 RS 庫存
- 最終 30 個，準備發貨
單位 | 每單位 |
|---|---|
| 1 + | TWD611.00 |
* 參考價格
- RS庫存編號:
- 214-973
- 製造零件編號:
- SCTWA40N12G24AG
- 製造商:
- STMicroelectronics
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 33A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Series | SCTWA40N12G24AG | |
| Package Type | Hip-247 | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 105mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Typical Gate Charge Qg @ Vgs | 63nC | |
| Maximum Power Dissipation Pd | 290W | |
| Forward Voltage Vf | 3.4V | |
| Maximum Operating Temperature | 200°C | |
| Standards/Approvals | AEC-Q101 | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 33A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Series SCTWA40N12G24AG | ||
Package Type Hip-247 | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 105mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Typical Gate Charge Qg @ Vgs 63nC | ||
Maximum Power Dissipation Pd 290W | ||
Forward Voltage Vf 3.4V | ||
Maximum Operating Temperature 200°C | ||
Standards/Approvals AEC-Q101 | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
The STMicroelectronics Silicon carbide Power MOSFET device has been developed using ST’s Advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.
Very fast and robust intrinsic body diode
Source sensing pin for increased efficiency
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