STMicroelectronics SCTW40N Type N-Channel MOSFET, 36 A, 1200 V Enhancement, 3-Pin Hip-247
- RS庫存編號:
- 219-4227
- 製造零件編號:
- SCTW40N120G2V
- 製造商:
- STMicroelectronics
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 管，共 30 件）*
TWD18,000.00
(不含稅)
TWD18,900.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2027年2月09日 發貨
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單位 | 每單位 | 每管* |
|---|---|---|
| 30 - 90 | TWD600.00 | TWD18,000.00 |
| 120 + | TWD585.00 | TWD17,550.00 |
* 參考價格
- RS庫存編號:
- 219-4227
- 製造零件編號:
- SCTW40N120G2V
- 製造商:
- STMicroelectronics
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 36A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | Hip-247 | |
| Series | SCTW40N | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 700mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 3.3V | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 13nC | |
| Maximum Power Dissipation Pd | 278W | |
| Maximum Operating Temperature | 175°C | |
| Height | 20.15mm | |
| Length | 15.75mm | |
| Standards/Approvals | No | |
| Width | 5.15 mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 36A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type Hip-247 | ||
Series SCTW40N | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 700mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 3.3V | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 13nC | ||
Maximum Power Dissipation Pd 278W | ||
Maximum Operating Temperature 175°C | ||
Height 20.15mm | ||
Length 15.75mm | ||
Standards/Approvals No | ||
Width 5.15 mm | ||
Automotive Standard No | ||
The STMicroelectronics silicon carbide power MOSFET device has been developed using ST’s advanced and innovative 2nd generation Sic MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.
Very high operating junction temperature capability (TJ = 200 °C)
Very fast and robust intrinsic body diode
Extremely low gate charge and input capacitance
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