STMicroelectronics SCTW Type N-Channel MOSFET, 60 A, 1200 V Enhancement, 4-Pin Hip-247 SCTWA60N120G2-4
- RS庫存編號:
- 230-0094
- 製造零件編號:
- SCTWA60N120G2-4
- 製造商:
- STMicroelectronics
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- RS庫存編號:
- 230-0094
- 製造零件編號:
- SCTWA60N120G2-4
- 製造商:
- STMicroelectronics
規格
產品概覽和技術數據資料表
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 60A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | Hip-247 | |
| Series | SCTW | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 52mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 3V | |
| Typical Gate Charge Qg @ Vgs | 22nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Maximum Power Dissipation Pd | 388W | |
| Maximum Operating Temperature | 175°C | |
| Height | 21.1mm | |
| Width | 5.1 mm | |
| Length | 15.9mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 60A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type Hip-247 | ||
Series SCTW | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 52mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 3V | ||
Typical Gate Charge Qg @ Vgs 22nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Maximum Power Dissipation Pd 388W | ||
Maximum Operating Temperature 175°C | ||
Height 21.1mm | ||
Width 5.1 mm | ||
Length 15.9mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The STMicroelectronics SCTWA60N is silicon carbide power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.
Very fast and robust intrinsic body diode
Extremely low gate charge and input capacitance
Source sensing pin for increased efficiency
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