onsemi SUPERFET V Type N-Channel MOSFET, 57 A, 600 V Enhancement, 3-Pin TO-247 NTHL041N60S5H
- RS庫存編號:
- 230-9087
- 製造零件編號:
- NTHL041N60S5H
- 製造商:
- onsemi
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- RS庫存編號:
- 230-9087
- 製造零件編號:
- NTHL041N60S5H
- 製造商:
- onsemi
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 57A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-247 | |
| Series | SUPERFET V | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 41mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 108nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 329W | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Height | 41.07mm | |
| Standards/Approvals | Pb-Free, RoHS | |
| Width | 4.82 mm | |
| Length | 15.87mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 57A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-247 | ||
Series SUPERFET V | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 41mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 108nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 329W | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Height 41.07mm | ||
Standards/Approvals Pb-Free, RoHS | ||
Width 4.82 mm | ||
Length 15.87mm | ||
Automotive Standard No | ||
The ON Semiconductor series SUPERFET V MOSFET is the fifth generation high voltage super−junction (SJ) MOSFET family from ON Semiconductor. SUPERFET V delivers best−in−class FOMs (RDS(ON)·QG and RDS(ON)·EOSS) to improve not only heavy load but also light load efficiency. The 600 V SUPERET V series provides design benefits through reduced conduction and switching losses, while supporting extreme MOSFET dVDS/dt ratings at 120 V/ns. Consequently, the SUPERFET V MOSFET FAST series helps maximize system efficiency and power density.
100% Avalanche Tested
RoHS Compliant
Typ. RDS(on) = 32.8 mΩ
Internal Gate Resistance: 0.6 Ω
Ultra Low Gate Charge (Typ. Qg = 108 nC)
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